Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture
K. van Stiphout,Filip Geenen,B. De Schutter,N. M. Santos,S. M. C. Miranda,V. Joly,Christophe Detavernier,L. M. C. Pereira,Kristiaan Temst,André Vantomme +9 more
TL;DR: In this paper, the solid phase reaction of ultrathin Ni films with different Ge substrates (single-crystalline (100), poly-crystaline, and amorphous) was studied.
Journal ArticleDOI
p-type doping of Ge by Al ion implantation and pulsed laser melting
R. Milazzo,M. Linser,Giuliana Impellizzeri,Daniele Scarpa,Marco Giarola,Andrea Sanson,Gino Mariotto,Alberto Andrighetto,Alberto Carnera,Enrico Napolitani +9 more
TL;DR: In this paper, p-type doping aluminum ion implantation followed by pulsed laser annealing in the melting regime has been investigated for the first time, in particular, two different regimes have been studied, in order to explore the limit of incorporation for such a method: 6.4
Proceedings ArticleDOI
Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model
Harshit Agarwal,Pragya Kushwaha,Yogesh Singh Chauhan,Sourabh Khandelwal,Juan P. Duarte,Yen-Kai Lin,Huan-Lin Chang,Chenming Hu,Heng Wu,Peide D. Ye +9 more
TL;DR: In this article, a compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model is presented for Germanium On Insulator (GeOI) devices.
Journal ArticleDOI
Synthesis of visible light emitting self assembled Ge nanocrystals embedded within a SiO 2 matrix
A. Hernández-Hernández,Victor-Tapio Rangel-Kuoppa,Thomas Plach,F. de Moure-Flores,J. G. Quiñones-Galván,Jaime Santoyo-Salazar,M. Zapata-Torres,L.A. Hernández-Hernández,M. Meléndez-Lira +8 more
TL;DR: In this article, as-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO2 matrix were produced via a sequential deposition process of SiO 2/Ge/SiO2 layers employing a reactive radio frequency sputtering technique.
Journal ArticleDOI
Structural Evolution, Electronic Structures, and Vibrational Properties of Anionic LuGen (n = 5-17) Clusters: From Lu-Linked to Lu-Encapsulated Configurations.
TL;DR: In this paper, the structural evolution pattern and electronic properties of Lu-doped germanium anion clusters, LuGen- (n = 5-17), have been investigated using a global search method combined with a double hybrid density functional theory and by comparing the theoretical PES spectra with the experimental ones.
References
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Proceedings ArticleDOI
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