Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Tetragermacyclobutadiene: Energetically Disfavored with Respect to Its Structural Isomers
TL;DR: The results demonstrate that the cyclic isomers of (GeH)4 distort to maximize the mixing of the p’orbitals that are involved in the π system of tetragermacyclobutadiene and the lowest-energy isomers exhibit unusual bonding arrangements that maximize the nonbonding electron density at the Ge centers.
Proceedings ArticleDOI
Beyond-Si materials and devices for more Moore and more than Moore applications
Nadine Collaert,A. Alian,Hiroaki Arimura,G. Boccardi,Geert Eneman,Jacopo Franco,Ts. Ivanov,Dennis Lin,Jerome Mitard,S. Ramesh,Rita Rooyackers,M. Schaekers,A. Sibaya-Hernandez,S. Sioncke,Quentin Smets,A. Vais,Anne Vandooren,Anabela Veloso,Anne S. Verhulst,Devin Verreck,Niamh Waldron,A. Walke,Liesbeth Witters,Hao Yu,X. Zhou,Aaron Thean +25 more
TL;DR: The benefits and challenges of integrating pMOS and nMOS on a Si platform will be discussed and the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.
Journal ArticleDOI
Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3
TL;DR: In this article, it was shown that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.
Group IV epitaxy for advanced nano- and optoelectronic applications
TL;DR: A low temperature reduced pressure chemical vapour process using commercially available Geand Sn-precursors, namely Ge2H6 and SnCl4, is developed for the growth of GeSn and SiGeSn epilayers directly on Si(1) and on Ge-buffered Si(2).
Book ChapterDOI
Growth of Semiconductor Nanocrystals
TL;DR: In this paper, the growth of semiconductor nanocrystals, including quantum well, wire, nanowire, and quantum dot with selective area growth, is summarized and the position-controlled growth of nanocrystal by using faceting growth and mechanisms is described.
References
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Proceedings ArticleDOI
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Proceedings ArticleDOI
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Journal ArticleDOI
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Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
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