Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,Floor van Riggelen,Sander L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI
Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap
TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Proceedings ArticleDOI
Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
Jerome Mitard,B. De Jaeger,Frederik Leys,Geert Hellings,Koen Martens,Geert Eneman,David P. Brunco,Roger Loo,Jing-Cheng Lin,Denis Shamiryan,T. Vandeweyer,Gillis Winderickx,E. Vrancken,C.H. Yu,K. De Meyer,Matty Caymax,Luigi Pantisano,Marc Meuris,M.M. Heyns +18 more
TL;DR: In this paper, a 65 nm Ge pFET with a record performance of Ion = 478muA/mum and Ioff,s= 37nA /mum @Vdd= -1V.
Journal ArticleDOI
Extremely high transconductance Ge/Si/sub 0.4/Ge/sub 0.6/ p-MODFET's grown by UHV-CVD
TL;DR: In this article, a Ge/Si/sub 0.4/Ge/Sub 0.6/Heterostructure with a Hall mobility of 1750 cm/sup 2/Vs (30,900 cm/Sup 2/V) at room temperature (77 K) was reported.
Proceedings ArticleDOI
Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications
Mantu K. Hudait,G. Dewey,Suman Datta,J. M. Fastenau,Jack Portland Kavalieros,W. K. Liu,D. Lubyshev,R. Pillarisetty,W. Rachmady,Marko Radosavljevic,Titash Rakshit,R. Chau +11 more
TL;DR: In this article, the authors describe the heterogeneous integration of In0.7Ga0.3As QWFETs on Si substrate for future high-speed digital logic applications at low supply voltage such as 0.5 V.
Proceedings ArticleDOI
Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode
Andrew P. Ritenour,S. Yu,M.L. Lee,Nanshu Lu,Weiping Bai,Arthur J. Pitera,Eugene A. Fitzgerald,Dim-Lee Kwong,D.A. Antoniadis +8 more
TL;DR: Germanium p-MOSFETs with a thin high-k dielectric (EOT/spl sim/16 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates as discussed by the authors.
Journal ArticleDOI
Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
TL;DR: In this paper, the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric were investigated.
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