Journal ArticleDOI
Accuracy of conventional inversion charge modeling in scaled down MOS devices
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TLDR
In this article, the density of surface inversion charge in MOS structures is typically calculated using the relation Q = cox (V G − V T ), and the authors tried to quantitatively assess the goodness of this relation in the case of MOS devices scaled down according to constant field scaling and constant voltage scaling principles.About:
This article is published in Microelectronics Reliability.The article was published on 1988-01-01. It has received 0 citations till now. The article focuses on the topics: Poisson's equation & Scaling.read more
References
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Journal ArticleDOI
Design of ion-implanted MOSFET's with very small physical dimensions
TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Journal ArticleDOI
Charge accumulation and mobility in thin dielectric MOS transistors
TL;DR: In this paper, the turn-on of very thin dielectric MOS devices from subthreshold to strong inversion was studied and a functional form has been found for the derivative of channel charge with respect to gate voltage.
Journal ArticleDOI
The impact of scaling laws on the choice of n-channel or p-channel for MOS VLSI
TL;DR: The p-channel devices under these conditions are shown to be 100x less effected by hot carriers induced reliability problems than the n-channel ones as mentioned in this paper, and the performance of the two to approach each other at L < 0.3µm.
Journal ArticleDOI
Moderate inversion in MOS devices
TL;DR: In this article, the limits of validity of common approximations for weak and strong inversion are examined, and it is shown that at the lower limit of what is often defined as strong-inversion region, incremental quantities such as transconductance can be an order-of-order smaller than the value predicted by using common strong inversions.
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