Journal ArticleDOI
Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications
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TLDR
In this article, an improved physical equivalent circuit was derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network, which was implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer aided design device simulations and experimental data.Abstract:
A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal transient simulations and a small-signal ac analysis, is developed in this paper. An improved physical equivalent circuit, capturing NQS effects in the millimeter waveband, is derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network. The proposed model is implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer-aided design device simulations and experimental data. The proposed model is in very good agreement with the data up to ${50}{f}_{t}$ . The transient currents, for a gate-voltage switching rate of ${5}\times {10}^{{10}}$ V/s, show excellent match with the data. The dc, transient, and ac simulations using the proposed model are much faster than a 10-segmented MOSFET model. This shows that the proposed model is better than other computationally complex compact models, for most RF applications.read more
Citations
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Journal ArticleDOI
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
Journal ArticleDOI
Improved Modeling of Bulk Charge Effect for BSIM-BULK Model
TL;DR: An improved model of bulk charge effect for both drain current and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model is presented.
Proceedings ArticleDOI
BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design
TL;DR: The recent and upcoming enhancements of the industry standard BSIM-BULK model are presented and an analytical model for bulk charge effect, in both current and capacitance, is implemented to improve the model accuracy for transconductance and output conductance.
Proceedings ArticleDOI
Signal Integrity Analysis Based on SVR Improved Algorithm
TL;DR: In this paper, a fast optimization hyperparameter and sparse support vector machine (FOH-SSVM) algorithm was proposed to solve the problem of signal integrity, which greatly reduced the modeling time and increased the prediction accuracy.
Proceedings ArticleDOI
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF
Sabine Kolodinski,B. Peng,C. Esposito,Yves Zimmermann,Michael Schroter,Xin Xu,Paolo Valerio Testa,Corrado Carta,Frank Ellinger,Steffen Lehmann,M. Drescher,C. Mart,Maciej Wiatr,Wenke Weinreich,Violetta Sessi,Jens Trommer,Talha Chohan,Halid Mulaosmanovic,Walter M. Weber,Stefan Slesazeck +19 more
TL;DR: Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented from GFs subcontracts in the IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, a CMOS compatible new material Si doped HfO2 for electrocaloric/ pyroelectric effects on chip.
References
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Book
Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Proceedings ArticleDOI
An effective gate resistance model for CMOS RF and noise modeling
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.
Journal ArticleDOI
A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation
TL;DR: In this article, a non-quasi-static (NQS) MOSFET model is proposed for both large-signal transient and small-Signal ac analysis, which employs a physical relaxation time approach to take care of the finite channel charging time.
Journal ArticleDOI
A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation
M. Bagheri,Yannis Tsividis +1 more
TL;DR: In this article, a four-terminal small-signal dc-to-high-frequency model, valid in weak, moderate, and strong inversion regimes, for the intrinsic part of the long-channel MOS transistor is presented.
Journal ArticleDOI
BSIM6: Analog and RF Compact Model for Bulk MOSFET
Yogesh Singh Chauhan,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,M. A. Karim,Harshit Agarwal,Sourabh Khandelwal,Navid Paydavosi,Juan Pablo Duarte,Christian Enz,Ali M. Niknejad,Chenming Hu +10 more
TL;DR: The BSIM6 model has been extensively validated with industry data from 40-nm technology node and shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations.