Journal ArticleDOI
Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications
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TLDR
In this article, an improved physical equivalent circuit was derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network, which was implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer aided design device simulations and experimental data.Abstract:
A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal transient simulations and a small-signal ac analysis, is developed in this paper. An improved physical equivalent circuit, capturing NQS effects in the millimeter waveband, is derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network. The proposed model is implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer-aided design device simulations and experimental data. The proposed model is in very good agreement with the data up to ${50}{f}_{t}$ . The transient currents, for a gate-voltage switching rate of ${5}\times {10}^{{10}}$ V/s, show excellent match with the data. The dc, transient, and ac simulations using the proposed model are much faster than a 10-segmented MOSFET model. This shows that the proposed model is better than other computationally complex compact models, for most RF applications.read more
Citations
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Journal ArticleDOI
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
Journal ArticleDOI
Improved Modeling of Bulk Charge Effect for BSIM-BULK Model
TL;DR: An improved model of bulk charge effect for both drain current and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model is presented.
Proceedings ArticleDOI
BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design
TL;DR: The recent and upcoming enhancements of the industry standard BSIM-BULK model are presented and an analytical model for bulk charge effect, in both current and capacitance, is implemented to improve the model accuracy for transconductance and output conductance.
Proceedings ArticleDOI
Signal Integrity Analysis Based on SVR Improved Algorithm
TL;DR: In this paper, a fast optimization hyperparameter and sparse support vector machine (FOH-SSVM) algorithm was proposed to solve the problem of signal integrity, which greatly reduced the modeling time and increased the prediction accuracy.
Proceedings ArticleDOI
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF
Sabine Kolodinski,B. Peng,C. Esposito,Yves Zimmermann,Michael Schroter,Xin Xu,Paolo Valerio Testa,Corrado Carta,Frank Ellinger,Steffen Lehmann,M. Drescher,C. Mart,Maciej Wiatr,Wenke Weinreich,Violetta Sessi,Jens Trommer,Talha Chohan,Halid Mulaosmanovic,Walter M. Weber,Stefan Slesazeck +19 more
TL;DR: Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented from GFs subcontracts in the IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, a CMOS compatible new material Si doped HfO2 for electrocaloric/ pyroelectric effects on chip.
References
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Journal ArticleDOI
An improved transmission-line model for MOS transistors
E. Abou-Allam,T. Manku +1 more
TL;DR: In this paper, a high-frequency small-signal model for MOSFET devices operating in the saturation regime is presented, which is based on a transmission-line treatment of the gate region, taking into account the distributed resistance-capacitance effects along the width of the device.
Proceedings ArticleDOI
Recent enhancements in BSIM6 bulk MOSFET model
Harshit Agarwal,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,Navid Paydavosi,Juan Pablo Duarte,Shantanu Agnihotri,Chandan Yadav,Pragya Kushwaha,Yogesh Singh Chauhan,Christian Enz,Ali M. Niknejad,Chenming Hu +11 more
TL;DR: In this paper, the authors discuss the recent enhancements made in the BSIM6 bulk MOSFET model and validate symmetry of the model by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC.
Journal ArticleDOI
Comments on "A small-signal MOSFET model for radio frequency IC applications"
TL;DR: It is demonstrated that simplified lumped-element circuits are adequate for modeling the effect of distributed gate resistance on both the y parameters and the thermal noise.
Journal ArticleDOI
A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis
TL;DR: In this paper, the authors presented a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation.
Journal ArticleDOI
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
Harshit Agarwal,Chetan Gupta,Pragya Kushwaha,Chandan Yadav,Juan P. Duarte,Sourabh Khandelwal,Chenming Hu,Yogesh Singh Chauhan +7 more
TL;DR: In this article, an analytical model of threshold voltage for bulk MOSFETs is developed, which is derived from the physical charge-based core of BSIM6 model, taking into account short channel effects, and is used in commercial SPICE simulators for operating point information.