Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
TL;DR: In this paper, a comprehensive theoretical study is presented to evaluate the achievable performance of Ge1-xSnx p-i-n homojunction photodetectors with strain-free and defect-free active layer for the purpose of demonstrating its potential in advancing the MIR detection technology.
Abstract: Ge1-xSnx photodetectors (PDs) have emerged as a new type of mid-infrared (MIR) CMOS-compatible PDs for a wide range of applications. Here we present a comprehensive theoretical study to evaluate the achievable performance of Ge1-xSnx p-i-n homojunction PDs with strain-free and defect-free Ge1-xSnx active layer for the purpose of demonstrating its potential in advancing the MIR detection technology. Starting from the Sn-composition-dependent band structures, the theoretical model calculates optical absorption, responsivity, dark current density, and detectivity. The results show that the optical responsivity can be enhanced with the Sn incorporation due to the improved optical absorption and the large mobilities and diffusion lengths of the photo-generated electrons and holes. The dark current density, however, increases with the increasing Sn composition. Our model suggests that not only the photodetection range of the Ge1-xSnx PDs can be extended to the MIR region but their detectivity at room temperature can be competitive with the existing MIR technology, and in some cases better than some commercial PDs operating at lower temperatures. This study establishes the ultimate performance that can be potentially achieved with the Ge1-xSnx MIR technology with the maturity of its material development in due time in addition to its much anticipated CMOS-compatible advantages.
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TL;DR: In this paper , an investigation on the photo response from a GeSn-based photodetector using a tunable laser with a range of incident light power was carried out, which indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities.
Abstract: We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.
9 citations
TL;DR: In this article , the structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6% with Sn content increased from 11% to 14.3%.
Abstract: The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm 2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth ( f 3 dB ) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.
8 citations
TL;DR: In this paper , complementary metal-oxide semiconductor (CMOS) compatible GeSn waveguide photodetectors (WGPDs) with a vertical p-i-n heterojunction configuration were demonstrated.
Abstract: The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐generation optical communication. As a result, silicon photonic platforms acquire great interest since they offer the ultimate minimization of photonic systems for 2 μm band applications. However, the large bandgap and indirectness of the band structure of the conventional SiGe alloy prevent their utilization for efficient photodetection in the 2 μm wavelength band. To overcome this drawback, complementary metal‐oxide semiconductor (CMOS)‐compatible GeSn waveguide photodetectors (WGPDs) with a vertical p–i–n heterojunction configuration that can operate in the 2 μm wavelength band is demonstrated. The proposed photodetector incorporates 5.28% Sn into the GeSn active layer, which redshifts the photodetection range to 2090 nm. In addition, the longer light–matter interaction length and good optical confinement of the proposed GeSn WGPD enhance the optical responses significantly. As a result, the proposed GeSn WGPD achieves a responsivity up to 0.52 A W−1 and a detectivity up to 7.9 × 108 cm Hz½ W−1 in the 2 μm wavelength band at room temperature. These promising results indicate that the developed GeSn WGPDs are promising candidates for integrated photonics in the 2 μm wavelength band.
7 citations
TL;DR: In this article , a metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform.
Abstract: In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potentially detect wavelength beyond 2,200 nm. The dark current density was measured to be 4.6 A/cm2 for GeSnOI waveguide-shaped photodetectors. The 3 dB bandwidth was observed to be 1.26 and 0.81 GHz at 1,550 and 2,000 nm wavelengths, respectively. This work opens up an opportunity for low-cost 2 µm wavelength photodetection on the GeSn/Ge interface-free GeSnOI platform.
5 citations
TL;DR: In this article , the authors presented a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs.
Abstract: Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p–i–n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W−1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.
5 citations
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Book•
12 Jul 1985
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Abstract: VOLUME ONE: Determination of Optical Constants: E.D. Palik, Introductory Remarks. R.F. Potter, Basic Parameters for Measuring Optical Properties. D.Y. Smith, Dispersion Theory, Sum Rules, and Their Application to the Analysis of Optical Data. W.R. Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region. D.E. Aspnes, The Accurate Determination of Optical Properties by Ellipsometry. J. Shamir, Interferometric Methods for the Determination of Thin-Film Parameters. P.A. Temple, Thin-Film Absorplance Measurements Using Laser Colorimetry. G.J. Simonis, Complex Index of Refraction Measurements of Near-Millimeter Wavelengths. B. Jensen, The Quantum Extension of the Drude--Zener Theory in Polar Semiconductors. D.W. Lynch, Interband Absorption--Mechanisms and Interpretation. S.S. Mitra, Optical Properties of Nonmetallic Solids for Photon Energies below the Fundamental Band Gap. Critiques--Metals: D.W. Lynch and W.R. Hunter, Comments of the Optical Constants of Metals and an Introduction to the Data for Several Metals. D.Y. Smith, E. Shiles, and M. Inokuti, The Optical Properties of Metallic Aluminum. Critiques--Semiconductors: E.D. Palik, Cadium Telluride (CdTe). E.D. Palik, Gallium Arsenide (GaAs). A. Borghesi and G. Guizzetti, Gallium Phosphide (GaP). R.F. Potter, Germanium (Ge). E.D. Palik and R.T. Holm, Indium Arsenide (InAs). R.T. Holm, Indium Antimonide (InSb). O.J. Glembocki and H. Piller, Indium Phosphide (InP). G. Bauer and H. Krenn, Lead Selenide (PbSe). G. Guizzetti and A. Borghesi, Lead Sulfide (PbS). G. Bauer and H. Krenn, Lead Telluride (PbTe). D.F. Edwards, Silicon (Si). H. Piller, Silicon (Amorphous) (-Si). W.J. Choyke and E.D. Palik, Silicon Carbide (SiC). E.D. Palik and A. Addamiano, Zinc Sulfide (ZnS). Critiques--Insulators: D.J. Treacy, Arsenic Selenide (As 2 gt Se 3 gt ). D.J. Treacy, Arsenic Sulfide (As 2 gt S 3 gt ). D.F. Edwards and H.R. Philipp, Cubic Carbon (Diamond). E.D. Palik and W.R. Hunter, Litium Fluoride (LiF). E.D. Palik, Lithium Niobote (LiNbO 3 gt ). E.D. Palik, Potassium Chloride (KCl). H.R. Philipp, Silicon Dioxide (SiO 2 gt ), Type ( (Crystalline). H.R. Philipp, Silicon Dioxide (SiO 2 gt ) (Glass). gt H.R. Philipp, Silicon Monoxide (SiO) (Noncrystalline). H.R. Philipp, Silicon Nitride (Si 3 gt N 4 gt ) (Noncrystalline). J.E. Eldridge and E.D. Palik, Sodium Chloride (NaCl). M.W. Ribarsky, Titanium Dioxide (TiO 2 gt ) (Rutile).
17,491 citations
Book•
01 Jan 1971TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
4,630 citations
TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Abstract: The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. RD however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mum, with cryocooling needed in some cases
1,789 citations
Book•
01 Jan 1972TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.
Abstract: For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications. Teaching and Learning Experience This program will provide a better teaching and learning experience-for you and your students. It will help: *Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. *Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. *Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.
1,632 citations