Advanced Flat-Panel Displays and Materials
TL;DR: This introductory article reviews the topics covered in this issue of MRS Bulletin on advanced flat-panel displays and materials and includes novel products that are based on the principle of flat- panel display technology, such as solid-state x-ray imagers.
Abstract: This introductory article reviews the topics covered in this issue of MRS Bulletin on advanced flat-panel displays and materials. The common requirements of flat-panel displays are compact dimensions, low power consumption, light weight, and high performance. Flat-panel displays are incorporated in many consumer products as well as in a large range of industrial, medical, military, transportation-related, and scientific instruments. In recent years, there have been dramatic improvements in flat-panel display technology due to an enhanced understanding of various new or existing materials as well as fabrication processes. “Flat-panel display” is a general term that includes many different types of technologies. It includes panels that are in mass production, such as passive or active addressed liquid-crystal displays or plasma displays, and those in the early production or development stages, such as organic light-emitting devices or electrophoretic displays. It also includes novel products that are based on the principle of flat-panel display technology, such as solid-state x-ray imagers. The articles in this issue cover a range of these topics.
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TL;DR: In this paper, the authors describe encapsulated passive matrix, video rate organic light-emitting diode (OLED) displays on flexible plastic substrates using a multilayer barrier encapsulation technology.
Abstract: We describe encapsulated passive matrix, video rate organic light-emitting diode (OLED) displays on flexible plastic substrates using a multilayer barrier encapsulation technology. The flexible OLED (FOLED™) displays are based on highly efficient electrophosphorescent OLED (PHOLED™) technology deposited on barrier coated plastic (Flexible Glass™ substrate) and are hermetically sealed with an optically transmissive multilayer barrier coating (Barix™ encapsulation). Preliminary lifetime to half initial luminance (L0∼100 cd/m2) of order 200 h is achieved on the passive matrix driven encapsulated 80 dpi displays; 2500 h lifetime is achieved on a dc tested encapsulated 5 mm2 FOLED test pixel. The encapsulated displays are flexed 1000 times around a 1 in. diameter cylinder and show minimal damage.
333 citations
TL;DR: In this paper, single crystal CaF2 nanocubes were synthesized by a simple hydrothermal method with the absence of surfactants and rare earth ions were introduced into the fluorite lattice by a chemical modified process.
96 citations
TL;DR: In this article, the crystallization of amorphous Si (a-Si) thin films was performed using atomic layer deposition (ALD) of nickel oxide, which is useful in providing a catalytic layer for formation of polycrystalline Si thin films for application to large-scale flat panel displays.
Abstract: The crystallization of amorphous Si (a-Si) thin films was performed using atomic layer deposition (ALD) of nickel oxide. Nickel oxide layers were deposited using nickel aminoalkoxide as a precursor in Ni and water as a precursor in oxygen. The presence of nickel oxide caused significant crystallization to occur in a-Si at 575 °C under a reducing atmosphere. Even one single ALD layer of nickel oxide was high enough to crystallize the a-Si thin films. Self-limiting layer controllability in ALD is useful in providing a catalytic layer for formation of polycrystalline Si thin films for application to large-scale flat panel displays. © 2007 The Electrochemical Society. [DOI: 10.1149/1.2666721] All rights reserved.
23 citations
01 May 2003
TL;DR: In this article, a multilayer barrier encapsulation technology is used to encapsulate flexible OLED displays on flexible plastic substrates, achieving a half initial luminance (Lo∼100 cd/m2) of order 200 h.
Abstract: Fully encapsulated passive matrix, video rate, phosphorescent OLED displays on flexible plastic substrates using a multilayer barrier encapsulation technology are described. The flexible OLED (FOLED™) displays are based on highly efficient electrophosphorescent OLED (PHOLED™) technology deposited on barrier coated plastic film (Flexible Glass™ substrate) and are hermetically sealed with an optically transmissive multilayer barrier coating (Barix™ Encapsulation). Preliminary lifetime to half initial luminance (Lo∼100 cd/m2) of order 200 h is achieved on the encapsulated 80 dpi displays using a passive matrix drive at room temperature; 2500 h lifetime is achieved on a dc tested encapsulated 5 mm2 FOLED test pixel. The encapsulated displays are flexed 1000 times around a 1″ diameter cylinder and show minimal damage.
20 citations
TL;DR: Amorphous Si (a-Si) and Ni films were deposited by electron beam evaporation on to borosilicate glass (BSG) substrate maintained at ambient temperature.
Abstract: Amorphous Si (a-Si) and Ni films were deposited by electron beam evaporation on to borosilicate glass (BSG) substrate maintained at ambient temperature. The BSG/a-Si/Ni stack was subjected to post deposition annealing in air at various temperatures from 200 to 500 °C for 1 h. Electron diffraction was employed to characterize the crystallographic phases appearing on the stacks that were depending on initial conditions. Clear evidence of the formation of hexagonal Si and fcc NiSi2 was shown by TEM. In parallel, an increase of refraction index was observed. Electrical resistivity measurements showed that resistance is of the order of kilo ohms in the as-deposited films, increasing sharply to giga ohms in films annealed at T higher than 300 °C. A large band gap of 2.23 eV which is the combined contribution from a-Si, wurtzite-Si, and Ni silicide phases, is observed.
17 citations
Cites background from "Advanced Flat-Panel Displays and Ma..."
...With the release of pressure several metastable phases are observed (Kuo and Suzuki 2002; Nakajima et al. 2004)....
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..., Ni) seem to be promising candidates for TFT fabrication by MIC (Kuo and Suzuki 2002; Wang and Wong 2001)....
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