Journal ArticleDOI
Al + ion implanted 4H-SiC vertical p + -i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes
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TLDR
In this article, the reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes were compared for identically processed devices except for the implanted Al concentration in the emitter.Abstract:
The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm−3 against 2×1020 cm−3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes' ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.read more
Citations
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Journal ArticleDOI
Defects related to electrical doping of 4H-SiC by ion implantation
TL;DR: In this paper, the case of ion implanted 4H-SiC homo-epitaxial wafers during a high temperature post-implantation annealing in presence of homogeneous heating of the ion implanted wafer was investigated.
Journal ArticleDOI
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
TL;DR: In this paper, open-circuit voltage decay measurements of carrier lifetimes on 4H silicon carbide ion implanted planar p-i-n diodes of circular shape and different diameters are performed at increasing bias currents.
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The Role of Defects on Forward Current in 4H-SiC p-i-n Diodes
TL;DR: In this article, the authors investigated the impact of defect states on the measured forward current-voltage (I$ -V$ ) curves of planar 4H-SiC p-i-n diodes of a different anode dimension by means of a fine-tuned numerical model.
Journal ArticleDOI
Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs
Sergio Sapienza,Giovanna Sozzi,Danilo Santoro,P. Cova,Nicola Delmonte,G. Verrini,Giovanni Chiorboli +6 more
TL;DR: In this article, an experimental-simulation approach is presented to correlate the carrier lifetime measured by simple OCVD measurements versus temperature with the reverse recovery behavior of the body diode, that can be useful at the design stage of power converters.
Journal ArticleDOI
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
TL;DR: In this article, the effect of circuit setup on the ambipolar lifetime is discussed and a method, originally developed for improving the estimate of low-level carrier lifetime in OCVD measurements, is used to correct the measured lifetime for this influence.
References
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Journal ArticleDOI
On the post-injection voltage decay of p-s-n rectifiers at high injection levels
H. Schlangenotto,W. Gerlach +1 more
TL;DR: In this article, the post-injection voltage decay of p+s-n+ rectifiers is analyzed at high carrier levels where the recombination in the heavily-doped end regions is significant.
Journal ArticleDOI
Recombination in silicon p−π−n diodes
TL;DR: In this article, an account of the recombination of excess carriers in silicon over seven orders of magnitude of injected carrier density is given, and the Shockley-Read theory verified throughout the same range.
Journal ArticleDOI
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
TL;DR: In this article, the evolution of the carbon vacancy (VC) concentration in the epitaxial layer was monitored by deep level transient spectroscopy via the characteristic Z1/2 peak.