Journal ArticleDOI
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
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TLDR
In this paper, a systematic study of GaN-based heterostructure field effect transistors with an insulating carbon-doped GaN back barrier for high-voltage operation is presented.Abstract:
A systematic study of GaN-based heterostructure field-effect transistors with an insulating carbon-doped GaN back barrier for high-voltage operation is presented. The impact of variations of carbon doping concentration, GaN channel thickness, and substrates is evaluated. Tradeoff considerations in on-state resistance versus current collapse are addressed. Suppression of the off-state subthreshold drain-leakage currents enables a breakdown voltage enhancement of over 1000 V with a low on-state resistance. Devices with a 5-μm gate-drain separation on semi-insulating SiC and a 7-μm gate-drain separation on n-SiC exhibit 938 V and 0.39 mΩ·cm2 and 942 V and 0.39 m Ω·cmcm2, respectively. A power device figure of merit of ~ 2.3 × 109 V2/Ω·cm2 was calculated for these devices.read more
Citations
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Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
Journal ArticleDOI
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
TL;DR: In this paper, the bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction field effect transistors is studied in drift diffusion simulations, distinguishing between acceptor traps situated in the top and bottom half of the bandgap, with Fe and C used as specific examples.
Journal ArticleDOI
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
TL;DR: In this article, the vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage (I-V) measurements.
References
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Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.
Journal ArticleDOI
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
TL;DR: In this article, a high-voltage high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers, and the device breakdown voltage was found to increase with the addition of the field plates.
Journal ArticleDOI
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
TL;DR: In this paper, the two deep traps responsible for current collapse in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor phase epitaxy have been studied by photoionization spectroscopy.
Journal ArticleDOI
Punch-through in short-channel AlGaN/GaN HFETs
Michael J. Uren,K. J. Nash,R.S. Balmer,Trevor Martin,Erwan Morvan,N. Caillas,Sylvain Delage,Damien Ducatteau,B. Grimbert,J.C. De Jaeger +9 more
TL;DR: In this paper, it is shown that a net acceptor density of around 10/sup 17/ cm/sup -3/ is required to ensure suppression of short-channel effects.
Journal ArticleDOI
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
Sarah L. Keller,Yifeng Wu,Giacinta Parish,Naiqian Ziang,J.J. Xu,Bernd Keller,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this paper, the development of GaN-based devices for microwave power electronics at the University of California, Santa Barbara (UCSB) is reviewed, and the power performance of AlGaN/GaN-on-sapphire heterojunction field effect transistors improved from 1.1 W/mm to 6.6 W /mm, respectively.