All-optical high-speed signal processing with silicon–organic hybrid slot waveguides
TL;DR: In this paper, a silicon-organic hybrid slot waveguide with a strong optical nonlinearity is demonstrated to perform ultrafast all-optical demultiplexing of high-bit-rate data streams.
Abstract: Integrated optical circuits based on silicon-on-insulator technology are likely to become the mainstay of the photonics industry. Over recent years an impressive range of silicon-on-insulator devices has been realized, including waveguides1,2, filters3,4 and photonic-crystal devices5. However, silicon-based all-optical switching is still challenging owing to the slow dynamics of two-photon generated free carriers. Here we show that silicon–organic hybrid integration overcomes such intrinsic limitations by combining the best of two worlds, using mature CMOS processing to fabricate the waveguide, and molecular beam deposition to cover it with organic molecules that efficiently mediate all-optical interaction without introducing significant absorption. We fabricate a 4-mm-long silicon–organic hybrid waveguide with a record nonlinearity coefficient of γ ≈ 1 × 105 W−1 km−1 and perform all-optical demultiplexing of 170.8 Gb s−1 to 42.7 Gb s−1. This is—to the best of our knowledge—the fastest silicon photonic optical signal processing demonstrated. A silicon–organic hybrid slot waveguide with a strong optical nonlinearity is demonstrated to perform ultrafast all-optical demultiplexing of high-bit-rate data streams. The approach could form the basis of compact high-speed optical processing units for future communication networks.
Citations
More filters
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Abstract: The nonlinearities in silicon are diverse. This Review covers the wealth of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics. The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.
1,123 citations
TL;DR: The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer-silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.
Abstract: The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.
683 citations
Additional excerpts
...Examples include recent hybrid systems that exploit the properties of both organics and inorganic...
[...]
TL;DR: In this article, a combination of an ultrasmall photonic-crystal nanocavity and strong carrier-induced nonlinearity in InGaAsP was used to demonstrate low-energy switching within a few tens of picoseconds.
Abstract: Although high-speed all-optical switches are expected to replace their electrical counterparts in information processing, their relatively large size and power consumption have remained obstacles. We use a combination of an ultrasmall photonic-crystal nanocavity and strong carrier-induced nonlinearity in InGaAsP to successfully demonstrate low-energy switching within a few tens of picoseconds. Switching energies with a contrast of 3 and 10 dB of 0.42 and 0.66 fJ, respectively, have been obtained, which are over two orders of magnitude lower than those of previously reported all-optical switches. The ultrasmall cavity substantially enhances the nonlinearity as well as the recovery speed, and the switching efficiency is maximized by a combination of two-photon absorption and linear absorption in the InGaAsP nanocavities. These switches, with their chip-scale integratability, may lead to the possibility of low-power, high-density, all-optical processing in a chip. All-optical switching energies as small as 0.42 fJ — two orders of magnitude lower than previously reported — are demonstrated in small photonic crystal cavities incorporating InGaAsP. These devices can switch within a few tens of picoseconds, and may therefore have potential for low-power high-density all-optical processing on a chip.
670 citations
Cites background from "All-optical high-speed signal proce..."
...In this respect, nonlinearities based on real transitions (for example, carrier-induced nonlinearities) are more efficient than those based on virtual transitions (for example, Kerr nonlinearities...
[...]
TL;DR: In this article, the design of nonlinear photonic metasurfaces is discussed, in particular the criteria for choosing the materials and symmetries of the meta-atoms.
Abstract: Compared with conventional optical elements, 2D photonic metasurfaces, consisting of arrays of antennas with subwavelength thickness (the ‘meta-atoms’), enable the manipulation of light–matter interactions on more compact platforms. The use of metasurfaces with spatially varying arrangements of meta-atoms that have subwavelength lateral resolution allows control of the polarization, phase and amplitude of light. Many exotic phenomena have been successfully demonstrated in linear optics; however, to meet the growing demand for the integration of more functionalities into a single optoelectronic circuit, the tailorable nonlinear optical properties of metasurfaces will also need to be exploited. In this Review, we discuss the design of nonlinear photonic metasurfaces — in particular, the criteria for choosing the materials and symmetries of the meta-atoms — for the realization of nonlinear optical chirality, nonlinear geometric Berry phase and nonlinear wavefront engineering. Finally, we survey the application of nonlinear photonic metasurfaces in optical switching and modulation, and we conclude with an outlook on their use for terahertz nonlinear optics and quantum information processing. Photonic metasurfaces can be used to control the polarization, phase and amplitude of light. Nonlinear metasurfaces enable giant nonlinear optical chirality, realization of the geometric Berry phase, wavefront engineering, and optical switching and modulation, and hold potential for on-chip applications.
542 citations
TL;DR: In this article, a slot waveguide-based ring resonator with a footprint of only 13 mum times 10 mum, fabricated with optical lithography, was presented for selective label-free sensing of proteins.
Abstract: We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography. Experiments show that it has 298 nm/RIU sensitivity and a detection limit of 4.2middot10-5 RIU for changes in the refractive index of the top cladding. We prove for the first time that surface chemistry for selective label-free sensing of proteins can be applied inside a 100 nm-wide slot region and demonstrate that the application of a slot waveguide instead of a normal waveguide increases the sensitivity of an SOI ring resonator with a factor 3.5 for the detection of proteins.
397 citations
References
More filters
TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Abstract: We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at highindex-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 mm 22 . This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides. © 2004 Optical Society of America OCIS codes: 030.4070, 130.0130, 130.2790, 230.7370, 230.7380, 230.7390, 230.7400. Recent results in integrated optics have shown the ability to guide, bend, split, and f ilter light on chips by use of optical devices based on high-index-contrast waveguides. 1–5 In all these devices the guiding mechanism is based on total internal ref lection (TIR) in a highindex material (core) surrounded by a low-indexmaterial (cladding); the TIR mechanism can strongly confine light in the high-index material. In recent years a number of structures have been proposed to guide or enhance light in low-index materials, 6–1 1 relying on external ref lections provided by interference effects. Unlike TIR, the external ref lection cannot be perfectly unity; therefore the modes in these structures are inherently leaky modes. In addition, since interference is involved, these structures are strongly wavelength dependent. Here we show that the optical field can be enhanced and conf ined in the low-index material even when light is guided by TIR. For a high-index-contrast interface, Maxwell’s equations state that, to satisfy the continuity of the normal component of electric f lux density D, the corresponding electric field (E-field) must undergo a large discontinuity with much higher amplitude in the low-index side. We show that this discontinuity can be used to strongly enhance and confine light in a nanometer-wide region of low-index material. The proposed structure presents an eigenmode, and it is compatible with highly integrated photonics technology. The principle of operation of the novel structure can be illustrated by analysis of the slab-based structure shown in Fig. 1(a), where a low-index slot is embedded between two high-index slabs (shaded regions). The novel structure is hereafter referred to as a slot waveguide. The slot waveguide eigenmode can be seen as being formed by the interaction between the fundamental eigenmodes of the individual slab waveguides. Rigorously, the analytical solution for the transverse E-field profile Ex of the fundamental TM eigenmode of the slab-based slot waveguide is
1,716 citations
"All-optical high-speed signal proce..." refers background in this paper
...It consists of a silicon slotted waveguide that is filled and surrounded by a nonlinear organic claddin...
[...]
IBM1
TL;DR: An over 300-fold reduction of the group velocity on a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic crystal waveguides that can support an optical mode with a submicrometre cross-section is experimentally demonstrated.
Abstract: It is known that light can be slowed down in dispersive materials near resonances. Dramatic reduction of the light group velocity-and even bringing light pulses to a complete halt-has been demonstrated recently in various atomic and solid state systems, where the material absorption is cancelled via quantum optical coherent effects. Exploitation of slow light phenomena has potential for applications ranging from all-optical storage to all-optical switching. Existing schemes, however, are restricted to the narrow frequency range of the material resonance, which limits the operation frequency, maximum data rate and storage capacity. Moreover, the implementation of external lasers, low pressures and/or low temperatures prevents miniaturization and hinders practical applications. Here we experimentally demonstrate an over 300-fold reduction of the group velocity on a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic crystal waveguides that can support an optical mode with a submicrometre cross-section. In addition, we show fast (approximately 100 ns) and efficient (2 mW electric power) active control of the group velocity by localized heating of the photonic crystal waveguide with an integrated micro-heater.
1,307 citations
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Abstract: An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
1,257 citations
TL;DR: In this paper, the authors discuss mechanisms in silicon photonics for waveguiding, modulating, light amplification, and emission, together with recent advances of fabrication techniques, have enabled the demonstration of ultracompact passive and active silicon photonic components with very low loss.
Abstract: Silicon photonics could enable a chip-scale platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. This paper discusses mechanisms in silicon photonics for waveguiding, modulating, light amplification, and emission. These mechanisms, together with recent advances of fabrication techniques, have enabled the demonstration of ultracompact passive and active silicon photonic components with very low loss.
725 citations
TL;DR: In this article, the Si wire waveguide was used for the fabrication of a ring resonator and lattice filter, which exhibited excellent characteristics because of the microfabrication with the precision of a few nanometers.
Abstract: This work presents our recent progress in the development of an Si wire waveguiding system for microphotonics devices. The Si wire waveguide promises size reduction and high-density integration of optical circuits due to its strong light confinement. However, large connection and propagation losses had been serious problems. We solved these problems by using a spot-size converter and improving the microfabrication technology. As a result, propagation losses as low as 2.8 dB/cm for a 400/spl times/200 nm waveguide and a coupling loss of 0.5 dB per connection were obtained. As we have the technologies for the fabrication of complex, practical optical devices using Si wire waveguides, we used them to make microphotonics devices, such as a ring resonator and lattice filter. The devices we made exhibit excellent characteristics because of the microfabrication with the precision of a few nanometers. We have also demonstrated that Si wire waveguides have great potential for use in nonlinear optical devices.
693 citations