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Journal ArticleDOI

All-organic active matrix flexible display

21 Feb 2006-Applied Physics Letters (American Institute of Physics)-Vol. 88, Iss: 8, pp 083502
TL;DR: In this article, a pentacene organic thin-film transistor (OTFT) driven active matrix organic light-emitting diode (OLED) displays on flexible polyethylene terephthalete substrates were fabricated.
Abstract: We have fabricated pentacene organic thin-film transistor (OTFT) driven active matrix organic light-emitting diode (OLED) displays on flexible polyethylene terephthalete substrates These displays have 48×48 bottom-emission OLED pixels with two pentacene OTFTs used per pixel Parylene is used to isolate the OTFTs and OLEDs with good OTFT yield and uniformity
Citations
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Journal ArticleDOI
TL;DR: New approaches to add functionality were developed to improve the processability of these materials in solution, allowing the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied.
Abstract: Acenes have long been the subject of intense study because of the unique electronic properties associated with their pi-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships.

1,741 citations

Journal ArticleDOI
TL;DR: The manufacture of printable elastic conductors comprising single-walled carbon nanotubes (SWNTs) uniformly dispersed in a fluorinated rubber is described, which is constructed a rubber-like stretchable active-matrix display comprising integrated printed elastic conductor, organic transistors and organic light-emitting diodes.
Abstract: Stretchability will significantly expand the applications scope of electronics, particularly for large-area electronic displays, sensors and actuators. Unlike for conventional devices, stretchable electronics can cover arbitrary surfaces and movable parts. However, a large hurdle is the manufacture of large-area highly stretchable electrical wirings with high conductivity. Here, we describe the manufacture of printable elastic conductors comprising single-walled carbon nanotubes (SWNTs) uniformly dispersed in a fluorinated rubber. Using an ionic liquid and jet-milling, we produce long and fine SWNT bundles that can form well-developed conducting networks in the rubber. Conductivity of more than 100 S cm(-1) and stretchability of more than 100% are obtained. Making full use of this extraordinary conductivity, we constructed a rubber-like stretchable active-matrix display comprising integrated printed elastic conductors, organic transistors and organic light-emitting diodes. The display could be stretched by 30-50% and spread over a hemisphere without any mechanical or electrical damage.

1,616 citations

Journal ArticleDOI
15 Feb 2007-Nature
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Abstract: Organic transistors and circuits show great promise for the realization of futuristic roll-up displays, adaptive sensors for humanoid robots and ubiquitous radio-frequency identification tags. But today's organic circuits require operating voltages of 15 to 30 volts (10 to 20 batteries' worth), and they draw enough power to drain those batteries in a day. To overcome this major hurdle, Hagen Klauk et al. have developed a method of fabricating organic circuits that run on a single 1.5-volt battery for several years. The key to the method is the use of a layer of an insulating organic material just one molecule thick; although the layer is very thin, it leaks only a small amount of current, while it provides for a large capacitance. Two different types of organic semiconductors are used to fabricate transistors, logic gates and ring oscillators. A report of the development of organic electronic circuits, which require only a single 1.5V battery and last for several years. The main ingredient is the use of a single layer of an insulating organic material. Although the layer is very thin, it leaks only small amount of current, while providing for a large capacitance. The prospect of using low-temperature processable organic semiconductors to implement transistors, circuits, displays and sensors on arbitrary substrates, such as glass or plastics, offers enormous potential for a wide range of electronic products1. Of particular interest are portable devices that can be powered by small batteries or by near-field radio-frequency coupling. The main problem with existing approaches is the large power consumption of conventional organic circuits, which makes battery-powered applications problematic, if not impossible. Here we demonstrate an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc). The monolayer dielectric is grown on patterned metal gates at room temperature and is optimized to provide a large gate capacitance and low gate leakage currents. By combining low-voltage p-channel and n-channel organic thin-film transistors in a complementary circuit design, the static currents are reduced to below 100 pA per logic gate. We have fabricated complementary inverters, NAND gates, and ring oscillators that operate with supply voltages between 1.5 and 3 V and have a static power consumption of less than 1 nW per logic gate. These organic circuits are thus well suited for battery-powered systems such as portable display devices2 and large-surface sensor networks3 as well as for radio-frequency identification tags with extended operating range4.

1,324 citations

Journal ArticleDOI
26 Mar 2012-ACS Nano
TL;DR: In this paper, a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone was used to print thin-film transistors, with mobilities up to ∼95 cm2 V 1 s−1, as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance.
Abstract: We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm2 V–1 s–1, as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.

967 citations

References
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Journal ArticleDOI
TL;DR: In this article, a double-layer structure of organic thin films was prepared by vapor deposition, and efficient injection of holes and electrons was provided from an indium-tinoxide anode and an alloyed Mg:Ag cathode.
Abstract: A novel electroluminescent device is constructed using organic materials as the emitting elements. The diode has a double‐layer structure of organic thin films, prepared by vapor deposition. Efficient injection of holes and electrons is provided from an indium‐tin‐oxide anode and an alloyed Mg:Ag cathode. Electron‐hole recombination and green electroluminescent emission are confined near the organic interface region. High external quantum efficiency (1% photon/electron), luminous efficiency (1.5 lm/W), and brightness (>1000 cd/m2) are achievable at a driving voltage below 10 V.

13,185 citations

Journal ArticleDOI
12 Jun 1998-Science
TL;DR: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode (LED) of similar size, which represents a step toward all- polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Abstract: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

2,657 citations

Journal ArticleDOI
TL;DR: This paper review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
Abstract: In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. We also review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.

1,192 citations

Journal ArticleDOI
TL;DR: In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.
Abstract: Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.

915 citations

Journal ArticleDOI
TL;DR: In this article, the authors have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates using a low-temperature process.
Abstract: We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (<110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays.

792 citations