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Journal ArticleDOI

Ambient field effects on the current-voltage characteristics of nanowire field effect transistors

11 Feb 2011-Applied Physics Letters (American Institute of Physics)-Vol. 98, Iss: 6, pp 063508
TL;DR: In this paper, the effects of ambient field from the gate and drain contacts on the currentvoltage characteristics of a vertical nanowire field effect transistor having a lightly doped ungated length near the drain were investigated.
Abstract: We investigate the effects of ambient field from the gate and drain contacts on the current-voltage characteristics of a vertical nanowire field effect transistor having a lightly doped ungated length near the drain. Such a device is suitable for high voltage (tens of volts) applications. It is shown that the ambient field enhances the carrier concentration and divides the ungated region into gate-controlled and drain-controlled sections, controllable by the drain contact size and bias-voltages. These phenomena have a significant impact on the drain breakdown voltage, saturation voltage, saturation current and output resistance. The effects are established with the help of measured data and numerically calculated current-voltage curves and field lines.
Citations
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Journal ArticleDOI
TL;DR: In this article, the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field effect transistors (FETs) was demonstrated and a threshold voltage close to 3.9 V was reported.
Abstract: We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage close to 3.9 V, an ION/IOFF ratio of 104. The subthreshold slope was estimated to be around 0.9 V/decade and explained by a high traps density at the nanowire core/oxide shell interface with an estimated density of interface traps Dit ∼ 1.2 × 1013 cm−2 eV−1. Comparisons are made with both vertical Si and horizontal SiGe FETs performances.

27 citations

Journal ArticleDOI
TL;DR: In this paper, the authors report the fabrication and electrical characterization of Vertical Gate All Around Field Effect Transistors (GAA-FET) using nonintentionally doped Silicon NanoWires (SiNWs) grown by Chemical Vapour Deposition (CVD) using the VLS mechanism as conduction channel.

19 citations

Journal ArticleDOI
TL;DR: The first all-metal electrodes vertical gate-allaround (VGAA) FET fabricated using self-catalyzed selective grown InAs NWs array grown by metal organic chemical vapor deposition is reported.
Abstract: With the scaling down of field-effect transistors (FETs) to improve their performance, 3D vertical surrounding gate structure has drawn great attention. On the other hand, concerning the channel materials, InAs nanowires (NWs) have been demonstrated to have great potential in FET due to their high mobility and other excellent electrical properties. Here, we report the first all-metal electrodes vertical gate-allaround (VGAA) FET fabricated using self-catalyzed selective grown InAs NWs array grown by metal organic chemical vapor deposition. A typical transistor we fabricated has an on-state current larger than 37 μA/μm when the drain voltage and gate voltage are +0.6 V and +3.0 V, respectively, and an on-off ratio over 3 orders of magnitudes. We have measured 34 transistors in total, and most of them have the on-off ratio between 102 and 104. Annealing is observed to improve the contact property, increase the on-state current, but decrease the on-off ratio. The ways to improve the performance of InAs NW VGAA FET are discussed.

1 citations

References
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Journal ArticleDOI
TL;DR: In this article, the distribution of electrical potential and carrier concentration, the contact capacity, and its voltage dependence are calculated for Schottky contacts to various types of nanostructures, including nanolayers and nanowires of different thickness, as well as their arrays.
Abstract: Distributions of electrical potential and carrier concentration, the contact capacity, and its voltage dependence are calculated for Schottky contacts to various types of nanostructures, including nanolayers and nanowires of different thickness, as well as their arrays. The results demonstrate a dramatic dependence on the nanostructure geometry. Single nanostructures and planar arrays of nanowires cannot provide effective screening of the contact potential, so that the total stored charge and the structure capacity depend on the separation between external contacts. On the contrary, for nanolayer and two-dimensional nanowire arrays, the mutual electrostatic interaction between different elements provides effective screening with the screening length equal to the interelement distance, which determines the contact capacity and its voltage dependence.

18 citations