Amorphous and liquid semiconductors
01 Jan 1974-
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
Abstract: 1 The Nature of the Amorphous State.- 2 Structure of Amorphous Semi-conductors.- 3 Electronic Structure of Disordered Materials.- 4 Optical Properties of Amorphous Semiconductors.- 5 Electronic Properties of Amorphous Semiconductors.- 6 Switching and Memory in Amorphous Semiconductors.- 7 Structure and Electronic Properties of Liquid Semiconductors.
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TL;DR: A review of dielectric data for a wide range of solids proves the existence of a remarkable "universality" of frequency and time responses which is essentially incompatible with the multiplicity of currently accepted detailed interpretations as discussed by the authors.
Abstract: A review of dielectric data for a wide range of solids proves the existence of a remarkable ‘universality’ of frequency and time responses which is essentially incompatible with the multiplicity of currently accepted detailed interpretations. Certain unique features of the universal behaviour strongly suggest the dominant role of many-body interactions.
4,234 citations
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01 Jan 1979TL;DR: In this article, a brief description is given of the various manifestations of the universal fractional power law relaxation processes, which are contrasted with the classical or Debye law, and a novel very general approach based on the so-called energy criterion is introduced.
Abstract: A brief description is given of the various manifestations of the universal fractional power law relaxation processes, which are contrasted with the classical or Debye law. It is shown that the universal law is indeed found in a remarkable variety of physical and chemical situations, and this is deemed to merit a special attempt at finding a suitably general theoretical model. Several such models are briefly described, and a novel very general approach based on the so-called energy criterion is introduced. It is concluded that it is not yet possible to establish with certainty the validity of any of the models. >
4,012 citations
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
1,573 citations
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Abstract: Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.
1,386 citations
TL;DR: In this article, a unified theoretical treatment of the complex a.c. conductivity is given, within the pair approximation, for single electron tunnelling and hopping in both uncorrelated and strongly correlated cases, and the discussion is extended to pair processes and to atomic relaxation.
Abstract: Recent developments in the theoretical analysis and experimental study of frequency-dependent loss by relaxation in amorphous semiconductors are reviewed. A unified theoretical treatment of the complex a.c. conductivity is given, within the pair approximation, for single electron tunnelling and hopping in both uncorrelated and strongly correlated cases, and the discussion is then extended to pair processes and to atomic relaxation. The problems associated with measuring the frequency dependent conductivity of amorphous samples are considered, and relevant measurements reported for the different classes of amorphous semiconductors, tetrahedral and group V materials and chalcogenides are reviewed in the light of the available theoretical models. The similarity in the magnitudes and frequency, temperature and electric field dependences of the losses observed in many different systems at liquid helium temperatures is noted, and the possible physical reasons for this are examined.
1,025 citations