Amorphous Silicon Carbide Thin Films Produced in the Glow Discharge Deposition System
01 Jan 1989-pp 134-141
About: The article was published on 1989-01-01. It has received 1 citations till now. The article focuses on the topics: Carbon film & Nanocrystalline silicon.
••01 Jan 1997
TL;DR: In this article, the transformation of low-cost a-SiC:H films towards materials with applications in microelectronics (polysilicon, silicon carbide, nitride, oxinitride) is discussed.
Abstract: Low cost a-SiC:H films are easily available on different substrates by Plasma Enhanced CVD. The aim of this work is the transformation of these films towards materials with applications in microelectronics (polysilicon, silicon carbide, nitride, oxinitride). Laser, plasma irradiation and thermal treatments in controlled atmosphere are possible candidates to modify the chemical composition and/or the structure of the a-SiC:H films.
TL;DR: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f.c. glow discharge.
Abstract: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f. glow discharge. Substrates were held at a temperature T d between 400 and 800 K during deposition. In all three of the above materials the results of optical absorption and of d.c. conductivity measurements show a systematic variation with T d and with the volume ratio of the gases used. Electron microprobe results on silicon carbide specimens indicate that a wide range of film compositions can be prepared. The optical gap has a pronounced maximum at the composition Si00–32C0–68 where it is 2·8 eV for a sample deposited at T d = 500 K, but shifts to lower energies with increasing T d. The conductivity above about 400 K has a single activation energy approximately equal to half the optical gap and extended state conduction predominates if the silicon content exceeds 32%. If the latter is reduced, hopping transport takes over and it is suggested th...
TL;DR: In this article, a new type of amorphous silicon solar cell having a conversion efficiency of 8% level is introduced, which has a wide band gap window layer made of hydrogenated amorphized silicon carbide, with a good valency control.
Abstract: A new type of amorphous silicon solar cell having a conversion efficiency of 8% level is introduced. The cell has a wide band gap window layer made of hydrogenated amorphous silicon carbide, (a-SiC:H), with a good valency control. Electrical, optical and optoelectronic properties of a-SiC:H have been investigated, together with their valency controllability. A design concept and some key technologies to improve solar cell performance with this new material are demonstrated. A series of technical data on material preparation and cell performance are presented. Clear improvements in cell performance, not only IDC but also VDC, have been obtained. The realistic limit of the conversion efficiency in a-Si solar cells is estimated and discussed.
TL;DR: In this article, the polarization effects in the electroluminescence suggest the contribution of trapped carriers at the interface between Y2O3 and a-Si0.17C0.83:H/Y2O 3.
Abstract: Visible alternating current (AC) electroluminescence is studied with a sandwich structure of Y2O3/a-Si0.17C0.83:H/Y2O3. The applied voltage should exceed a critical value for initiating electroluminescence, which implies the association of hot carriers. The polarization effects in the electroluminescence suggest the contribution of trapped carriers at the interface between Y2O3 and a-Si0.17C0.83:H.
TL;DR: In this article, hydrogenated amorphous silicon films were produced from silane/hydrogen and silane-helium gas mixtures by RF glow discharge and optical emission spectroscopy was used as a diagnostic tool for studying the plasma during glow discharge depositions.
Abstract: Hydrogenated amorphous silicon films were produced from silane/hydrogen and silane/helium gas mixtures by RF glow discharge. We examined the optical and electrical properties of films produced with these gas mixtures, at various RF power levels and silane fractions. Film quality was analyzed by measuring the dark and photoconductivity, optical band gap, and activation energy. Optical emission spectroscopy was also used as a diagnostic tool for studying the plasma during glow discharge depositions. Experimental results indicate that amorphous silicon films made from silane/helium mixtures exhibit improved optoelectronic properties, higher deposition rates, and higher emission intensity ratios (ISiH/IH) as compared to films produced from silane/hydrogen mixtures. In preparing films from silane/helium mixtures, the onset of dust/powder formation occurs at considerably higher RF powers as compared to silane/hydrogen, thus making this approach an attractive commercial option for depositing films at high rates.
Related Papers (5)
24 May 1993