Journal ArticleDOI
An approximate solution of Poisson's equation for semiconductor device modeling
S.S. De,A. K. Ghosh +1 more
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TLDR
In this article, a new approximate relationship between position normalised by means of Debye length and normalised electrostatic potential has been obtained which can be used for semiconductor modeling, in, for example, the problem of the step junction at equilibrium.Abstract:
A new approximate relationship between position normalised by means of Debye length and normalised electrostatic potential has been obtained which can be used for semiconductor modeling, in, for example, the problem of the step junction at equilibrium.read more
Citations
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Journal ArticleDOI
Some analyses of potential profiles of forward‐biased high‐low junctions
S. S. De,A. K. Ghosh +1 more
TL;DR: In this paper, a model calculation for the variation of the normalized potential against the normalized position for a forward-biased, below 2 thermal voltage, high-low junction has been made through numerical computations of Poisson's equation.
Journal ArticleDOI
Study of the electrostatic potential in a finite semiconductor layer at equilibrium
G. Fournet,Jean-Paul Kleider +1 more
TL;DR: In this article, a general procedure for obtaining the spatial variations of the electrostatic potential in a crystalline semiconductor layer of finite thickness is described, and general analytic expressions are given in the framework of the depletion approximation.
Journal ArticleDOI
Modelling of a heavily doped high–low junction at equilibrium
S. S. De,A. K. Ghosh +1 more
TL;DR: In this paper, a computational analysis of Poisson's equation relating normalised potential with normalised position for a heavily doped high-low junction at equilibrium is made by choosing a model where both sides are assumed to be heavily doping with one side having a relatively lighter doping in comparison to the other side.
Journal ArticleDOI
Modelling of a forward-biased high-low junction
TL;DR: In this article, a model is presented to investigate the variation of majority carrier density as a function of position for a forward-biased high-low junction with a sufficiently large doping difference between the two sides.
Journal ArticleDOI
Modelling of the Accumulation Region for a High‐Low Junction at Equilibrium
S. S. De,A. K. Ghosh +1 more
TL;DR: In this article, a nouvelle solution analytique approximative reliant le potentiel normalise avec la position normalisee de la region d'accumulation is presented.
References
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Journal ArticleDOI
Replacing the depletion approximation
R.M. Warner,Renuka P. Jindal +1 more
TL;DR: In this article, the authors propose an approximate treatment of the surface and equilibrium-step-junction problems as a replacement for the depletion approximation, which is very simple and easy to use.
Journal ArticleDOI
A general solution for step junctions with infinite extrinsic end regions at equilibrium
Renuka P. Jindal,R.M. Warner +1 more
TL;DR: In this paper, a unified solution to determine the potential profiles for step junctions in equilibrium is presented, where the complete solution is determined by solving for the two sides of the junction separately, and the generalized solution consists first of a curve corresponding to majority-carrier accumulation, i.e., the low side of high-low junction.
Journal ArticleDOI
An extended and unified solution for the semiconductor surface problem at equilibrium
Renuka P. Jindal,R.M. Warner +1 more
TL;DR: In this paper, an equilibrium solution for the semiconductor surface in terms of the potential, electric field, charge density, and change in mobile-carrier concentrations throughout semiconductor as a function of the surface potential and bulk doping is presented.
Journal ArticleDOI
A new scaling length for modeling semiconductor space-charge regions
Renuka P. Jindal,R.M. Warner +1 more
TL;DR: In this paper, a new scaling length, whose use is complementary to that of extrinsic Debye length is proposed for cases where fixed charge is dominant, was proposed for distance normalization in cases where mobile charges are dominant.
Journal ArticleDOI
Modeling the inversion layer at equilibrium
D.-H. Ju,R.M. Warner +1 more
TL;DR: In this paper, approximate-analytic expressions for the relations between normalized potential, normalized position and normalized electric field within the inversion regime have been proposed for a range of variables of practical interest.