An Improved gm/ID Methodology for Ultra-Low-Power Nano-Scale CMOS OTA Design
01 Jan 2013-Communications in computer and information science (Springer, Berlin, Heidelberg)-pp 128-137
TL;DR: An improved g m /I D methodology for the design of low-power CMOS operational transconductance amplifier (OTA) circuit using nano-scale CMOS technology and the advantage of the improved methodology over the traditional methodology has been discussed and illustrated with simulation results.
Abstract: This paper presents an improved g m /I D methodology for the design of low-power CMOS operational transconductance amplifier (OTA) circuit using nano-scale CMOS technology. This methodology takes into considerations the dependence of the Early voltage parameter with the bias points of a nano-scale MOS transistor. With such considerations, the DC voltage gain of the circuit can be controlled by adjusting the bias points of the transistors and keeping the channel length constant. The advantage of the improved methodology over the traditional methodology has been discussed and illustrated with simulation results.
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01 Jan 1987
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Abstract: 1. SEMICONDUCTORS, JUNCTIONS AND MOFSET OVERVIEW 2. THE TWO-TERMINAL MOS STRUCTURE 3. THE THREE-TERMINAL MOS STRUCTURE 4. THE FOUR-TERMINAL MOS STRUCTURE 5. MOS TRANSISTORS WITH ION-IMPLANTED CHANNELS 6. SMALL-DIMENSION EFFECTS 7. THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE-SIGNAL MODELING 8. SMALL-SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES 9. HIGH-FREQUENCY SMALL-SIGNAL MODELS 10.MOFSET MODELING FOR CIRCUIT SIMULATION
3,156 citations
Book•
01 Jan 1987
TL;DR: In this article, the authors present a simple MOS LARGE-SIGNAL MODEL (SPICE Level 1) and a small-signal model for the MOS TRANSISTOR.
Abstract: 1.1 ANALOG INTEGRATED CIRCUIT DESIGN 1.2 NOTATION, SYMBOLOGY AND TERMINOLOGY 1.3 ANALOG SIGNAL PROCESSING 1.4 EXAMPLE OF ANALOG VLSI MIXED-SIGNAL CIRCUIT DESIGN 2.1 BASIC MOS SEMICONDUCTOR FABRICATION PROCESSES 2.2 THE PN JUNCTION 2.3 THE MOS TRANSISTOR 2.4 PASSIVE COMPONENTS 2.5 OTHER CONSIDERATIONS OF CMOS TECHNOLOGY 3.1 SIMPLE MOS LARGE-SIGNAL MODEL (SPICE LEVEL 1) 3.2 OTHER MOS LARGE-SIGNAL MODEL PARAMETERS 3.3 SMALL-SIGNAL MODEL FOR THE MOS TRANSISTOR 3.4 COMPUTER SIMULATION MODELS 3.5 SUBTHRESHOLD MOS MODEL 3.6 SPICE SIMULATION OF MOS CIRCUITS 4.1 MOS SWITCH 4.2 MOS DIODE/ACTIVE RESISTOR 4.3 CURRENT SINKS AND SOURCES 4.4 CURRENT MIRRORS 4.5 CURRENT AND VOLTAGE REFERENCES 4.6 BANDGAP REFERENCE 5.1 INVERTERS 5.2 DIFFERENTIAL AMPLIFIERS 5.3 CASCODE AMPLIFIERS 5.4* CURRENT AMPLIFIERS 5.5* OUTPUT AMPLIFIERS/BUFFERS 6.1 DESIGN OF CMOS OP AMPS 6.2 COMPENSATION OF OP AMP 6.3 DESIGN OF TWO-STAGE OP AMPS 6.4 POWER-SUPPLY REJECTION RATIO OF TWO-STAGE OP AMPS 6.5 CASCODE OP AMPS 6.6 SIMULATION AND MEASUREMENT OF OP AMPS 6.7 MACROMODELS FOR OP AMPS 7.1 BUFFERED OP AMPS 7.2 HIGH-SPEED/FREQUENCY OP AMPS 7.3 DIFFERENTIAL-OUTPUT OP AMPS 7.4 MICROPOWER OP AMPS 7.5 LOW NOISE OP AMPS 7.6 LOW VOLTAGE OP AMPS 8.1 CHARACTERIZATION OF A COMPARATOR 8.2 TWO-STAGE, OPEN-LOOP COMPARATOR DESIGN 8.3 OTHER OPEN-LOOP COMPARATORS 8.4 IMPROVING THE PERFORMANCE OF OPEN-LOOP COMPARATORS 8.5 DISCRETE-TIME COMPARATORS 8.6 HIGH-SPEED COMPARATORS APPENDIX A CIRCUIT ANALYSIS FOR ANALOG CIRCUIT DESIGN APPENDIX B INTEGRATED CIRCUIT LAYOUT APPENDIX C CMOS DEVICE CHARACTERIZATION APPENDIX D TIME AND FREQUENCY DOMAIN RELATIONSHIP FOR SECOND-ORDER SYSTEMS
2,741 citations
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IBM1
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.
2,680 citations
TL;DR: In this article, a new generation of predictive technology model (PTM) is developed to predict the characteristics of nanoscale CMOS, including process variations and correlations among model parameters.
Abstract: A predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and correlations among model parameters, must be included. In this paper, a new generation of predictive technology model (PTM) is developed to accomplish this goal. Based on physical models and early-stage silicon data, the PTM of bulk CMOS is successfully generated for 130- to 32-nm technology nodes, with an Leff of as low as 13 nm. The accuracy of PTM predictions is comprehensively verified: The error of I on is below 10% for both n-channel MOS and p-channel MOS. By tuning only ten primary parameters, the PTM can be easily customized to cover a wide range of process uncertainties. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime, particularly the interactions among Leff, Vth, mobility, and saturation velocity. A website has been established for the release of PTM: http://www.eas.asu.edu/~ptm
803 citations
TL;DR: In this paper, a new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used.
Abstract: A new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed. It is intended for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used because it provides a good compromise between speed and power consumption. The synthesis procedure is based on the relation between the ratio of the transconductance over DC drain current g/sub m//I/sub D/ and the normalized current I/sub D//(W/L). The g/sub m//I/sub D/ indeed is a universal characteristic of all the transistors belonging to a same process. It may be derived from experimental measurements and fitted with simple analytical models. The method was applied successfully to the design of a silicon-on-insulator (SOI) micropower operational transconductance amplifier (OTA).
604 citations