Journal ArticleDOI
An improved MOSFET model for circuit simulation
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TLDR
A new MOSFET model is presented that overcomes the errors present in state-of-the-art models and comparison with measured data is presented to validate the new model.Abstract:
Problems that have continued to remain in some of the recently published MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operation. A new MOSFET model is presented that overcomes the errors present in state-of-the-art models. Comparison with measured data is also presented to validate the new model.read more
Citations
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Journal ArticleDOI
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
G. Gildenblat,Xin Li,W. Wu,H. Wang,Amit Jha,R. van Langevelde,G.D.J. Smit,A.J. Scholten,D.B.M. Klaassen +8 more
TL;DR: In this paper, the authors describe the latest and most advanced surface potential-based model jointly developed by The Pennsylvania State University and Philips, which includes model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources.
Journal ArticleDOI
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
TL;DR: In this article, the implications of inversion charge linearization in compact MOS transistor modeling are discussed, and an improvement to the EKV charge-based model is proposed in the form of a more accurate charge-voltage relationship.
Journal ArticleDOI
SP: an advanced surface-potential-based compact MOSFET model
TL;DR: In this paper, an advanced physics-based compact MOSFET model (SP) is described, which includes the accumulation region, small-geometry effects, and a consistent current and charge formulation.
Journal ArticleDOI
Analytical approximation for the MOSFET surface potential
T.L. Chen,Gennady Sh. Gildenblat +1 more
TL;DR: This work presents and verify an extremely accurate and computationally efficient closed-form approximation, which can serve as a basis for advanced surface-potential-based MOSFET models.
Journal ArticleDOI
High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues
TL;DR: In this paper, the most important high-frequency (HF) noise sources of the MOSFETs are modeled, along with challenges in noise measurement and de-embedding of future CMOS technologies.
References
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Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
Threshold voltage model for deep-submicrometer MOSFETs
TL;DR: In this article, the threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep submicrometer range has been investigated.
Journal ArticleDOI
A charge-oriented model for MOS transistor capacitances
D.E. Ward,Robert W. Dutton +1 more
TL;DR: A new model for computer simulation of capacitance effects in MOS transistors is presented, which guarantees conservation of charge and includes bulk capacitances.