An opto-sensitive InP based IMPATT diode for application in terahertz regime
01 Dec 2007-pp 392-395
TL;DR: In this article, the dynamic properties of an InP p pnn IMPATT diode at 05 terahertz were studied through a simulation experiment, and it was shown that the InP IMPATT may deliver 270 mW of RF power at 5 GHz with an efficiency of 63% but the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device.
Abstract: The dynamic properties of an InP p pnn IMPATT diode at 05 terahertz are studied through a simulation experiment The study indicates that the InP IMPATT may deliver 270 mW of RF power at 05 terahertz with an efficiency of 63% However, the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device The effects of photo-illumination on the device are also investigated through a modified simulation technique The study reveals that the optically induced leakage current degrades the high frequency properties but with an advantage of wider tuning range of 86 GHz These studies reveal the potential of InP IMPATT in high-speed THz-optical switching tools
Citations
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01 Jan 2010
TL;DR: In this article, the authors compared the performance of InP, GaN, Wurtzite Gallium Nitride (Wz-GaN), and IV-IV Silicon Carbide (3C, 4H and 6H polytypes) at a frequency of 0.3THz.
Abstract: High-frequency characteristics of IMPATT Oscillators based on III-V Indium Phosphide (InP), III-V Wurtzite Gallium Nitride (Wz-GaN) and IV-IV Silicon Carbide (3C, 4H and 6H polytypes) are studied and their performances are compared at a frequency of 0.3THz. A double drift p + p n n + structure is chosen for all the materials and investigation has been carried out to obtain maximum conversion efficiency and device negative resistance by optimizing bias current density through modeling and simulation technique. A double iterative computer method based on modified drift-diffusion model has been used to study their performance. The simulation studies reveal that these devices are potential sources for generating high power in the Terahertz regime. The avalanche response time for each of the IMPATT diodes are simulated by a newly developed simulation technique and it has been observed that avalanche response time in InP, GaN and SiC IMPATTs are less than the corresponding transit time of the diodes- which is an essential condition to generate THz oscillation in these devices. The conversion efficiency of III-V InP IMPATT diode is found to be 18.4% at 0.3THz with an output power of 2.81W, whereas, III-V Wz-GaN IMPATT is found to generate much higher output power of 6.23W with a conversion efficiency of 15.47% at 0.3THz. On the other side, IMPATTs based on IV-IV SiC generate output power of 11.5W (3C-SiC), 20W (4H-SiC) and 7.5W (6H-SiC) with corresponding conversion efficiencies of 12.5% (3C-SiC), 15% (4H-SiC) and 12% (6H-SiC) at 0.3THz. The extensive simulation results reveal that though IMPATT diode based on SiC gives better performance in terms of higher output power in the Terahertz domain compared to other materials, GaN IMPATT has the advantage of higher efficiency. The design data and the proposed fabrication methodology, presented in this paper, will be helpful to realize InP, SiC and GaN based IMPATT oscillators for Terahertz communication.
17 citations
01 Jan 2011
TL;DR: In this paper, the performance of Wurtzite and Zinc-Blende (β-phase) of GaN based p + pnn + DDR IMPATTs was investigated at optimum bias current density.
Abstract: The Terahertz performances of Wurtzite (α-phase) and Zinc-Blende (β-phase) of GaN based p + pnn + DDR IMPATTs has been investigated at optimum bias current density. The modeling and simulation based on drift diffusion model has been carried out to study the DC and small signal properties of the device. The bias current optimization is based on maximum conversion efficiency and device negative resistance at 0.3 THz. The simulation results obtained reveals the strong potentiality of DDR IMPATTs based on α- and β-GaN as a powerful solid state source for generating high power in Terahertz domain. The conversion efficiency of the device is found to be 12.3% at an optimum bias current density of 0.2× 10 8 A/m 2 for α-GaN IMPATTs while the same result for β-GaN IMPATTs is 11.5% at 3.1× 10 9 A/m 2 . The design results presented in the paper are very promising and immensely useful to realize experimentally α- and β-GaN IMPATTs at THz frequency.
5 citations
Cites background from "An opto-sensitive InP based IMPATT ..."
...Indium Phosphide (InP), Silicon Carbide (SiC) and Gallium Nitride (GaN) are found to give satisfactory performance with high efficiency and power at THz domain [6-17]....
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13 Feb 2021
TL;DR: In this paper, a selective review has been carried on the impact ionization avalanche transit time (IMPATT) diode, which helps in detailed understanding of device operation in this domain.
Abstract: During last few years, numerous researches have been processed for the growth of reliable sources in the terahertz (THz) frequency regime. Among different solid-state sources, impact ionization avalanche transit time (IMPATT) diode is the most promising one for THz wave generation. Here, a selective review has been carried on THz IMPATT diode, which helps in detailed understanding of device operation in this domain. The paper mainly deals with several terahertz properties based on DC, noise, small and large-signal simulation of IMPATT devices. This study reveals the potency of this device in many THz applications.
1 citations
09 Aug 2016
TL;DR: In this article, the authors proposed a diamond-based MITATT diode based diode for Terahertz communication with high power and high frequency operation capability, which is expected from this wide band gap semiconductor based devices.
Abstract: Use of Diamond for electronic applications was started for development of photoconductive detectors. However limitations in size and control of properties naturally limited the use of Diamond to a few specialty applications. With the development of Diamond synthesis from vapour phase has come a more serious interest in developing diamond based electronic devices. Diamond (band gap energy = 5.6 eV at 300K) supports peak internal electric field about 6 times higher than those of Si and GaAs, resulting in higher breakdown voltage, which is extremely important for devices handling high power. Another consequence of higher electric field and higher doping density is the width reduction in the drift region. Thus, not only high power but also the high frequency (MM/sub-MMW) operation capability is expected from this wide band gap semiconductor based devices. Hence Diamond based devices are expected to operate at higher voltage at the same operating frequency. Diamond is less noisy and is chemically very stable at high temperature. The expected excellent performances of diamond devices can be assessed by considering Keyes‘ FOM (considering the speed of transistors and their thermal limitations) and Johnson‘s FOM (considering the HF and high power capability of devices). Assuming Keyes‘ and Johnson‘s FOM for Si as unity, the Keyes‘ FOM and Johnson‘s FOM for GaAs are 0.45 and 7.1 respectively; those for Type II-diamond are 2.5 and 800 respectively. This clearly indicates that the HF and high temperature performance of Diamond devices would be much superior as compared to conventional Si and GaAs. The extensive simulation results reveal that MITATT diode based on Diamond gives better performance in terms of efficiency and output power. The design results and the proposed experimental methodologies presented in this paper will be helpful to realize Diamond MITATT oscillators for Terahertz communication.
Cites background from "An opto-sensitive InP based IMPATT ..."
...Therefore , not only high power but also the high frequency (THz) operation capability is desired from this wide band gap based devices [9], [10]....
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References
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TL;DR: In this paper, a general small-signal theory of the avalanche noise in IMPATT diodes is presented, which is applicable to structures of arbitrary doping profile and uses realistic (α
eq \beta in Si) ionization coefficients.
Abstract: A general small-signal theory of the avalanche noise in IMPATT diodes is presented. The theory is applicable to structures of arbitrary doping profile and uses realistic ( \alpha
eq \beta in Si) ionization coefficients. The theory accounts in a self-consistent manner for space-charge feedback effects in the avalanche and drift regions. Two single-diffused n-p diodes of identical doping profile, one of germanium and the other of silicon, are analyzed in detail. For description of the noise of the diodes as small-signal amplifiers the noise measure M is used. Values for M of 20 dB are obtained in germanium from effects in the depletion region only, i.e., when parasitic end region resistance is neglected. Inclusion of an assumed parasitic end resistance of one ohm for a diode of area 10-4cm2produces the following noise measure at an input power of 5×104W/cm2, and at optimum frequency: germanium 25 dB, silicon 31 dB. For comparison, a noise figure of 30 dB has been reported [1] for a germanium structure of the same doping profile as used in the calculations. Measurements of silicon diodes of the same doping profile are not available, but typically silicon diodes give 6-8 dB higher noise figures than germanium diodes of comparable doping profile.
233 citations
"An opto-sensitive InP based IMPATT ..." refers methods in this paper
...G) vs. susceptance (B) plots), negative resistance of the optimized InP DDR diode is determined by GummelBlue approach after satisfying the appropriate boundary conditions [3]....
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...The authors have evaluated RS from the admittance characteristics using the realistic analysis of GummelBlue [6] and Alderstein et al [5] without any drastic assumption....
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TL;DR: The development, operating principles, and state-of-the-art of various diode and transistor structures are reviewed.
Abstract: Starting with exploratory work in the 1930s and development work in the 1940s a variety of two-terminal and three-terminal solid-state device structures have been proposed, fabricated, and developed. This work parallels the development effort on vacuum electronic devices, and the two technologies share many applications. The solid-state and vacuum electronic devices work in tandem to enable numerous commercial and military systems. Solid-state device development is closely linked to semiconductor materials growth and processing technology, and advances such as the introduction of heterojunction growth technology, permit complex multiple layer device structures to be fabricated and optimized for maximized device performance. This work has been very successful and a variety of high-performance diodes and transistors are now available for use from UHF into the millimeter-wave spectrum, approaching terahertz frequencies. The development, operating principles, and state-of-the-art of various diode and transistor structures are reviewed.
98 citations
"An opto-sensitive InP based IMPATT ..." refers background in this paper
...Among all two terminal semiconductor devices, InP based IMPATT (IMPact Avalanche Transit Time) diodes are considered as excellent candidates for high power, high efficiency solid-state sources at mmwave frequencies [1]....
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TL;DR: In this paper, the electrical series resistance of an IMPATT diode was measured based on the oscillation threshold bias current of the diode in a standard circuit and applied to GaAs diodes near 40 GHz.
Abstract: A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
53 citations
"An opto-sensitive InP based IMPATT ..." refers background or methods in this paper
...G and B are functions of RF voltage (VRF) and frequency ( ) such that the steady state condition for oscillation is given by [5]:...
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...The authors have evaluated RS from the admittance characteristics using the realistic analysis of GummelBlue [6] and Alderstein et al [5] without any drastic assumption....
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TL;DR: In this paper, the effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static I-V characteristics, where the composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length.
Abstract: The effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static I-V characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.
48 citations
01 Jan 2007
TL;DR: In this article, the dynamic properties of a 4H-SiC DDR (p + p n n + type) IMPATT diode operating at 0.5 THz region are studied through DC and small-signal analysis.
Abstract: The dynamic properties of a 4H-SiC DDR (p + p n n + type) IMPATT diode operating at 0.5 THz region are studied through DC and smallsignal analysis. The study indicates that 4H-SiC IMPATT is capable of generating high RF power (P RF ) (2.70 W) at 0.515 terahertz with high efficiency (12 %). However, the parasitic series resistance is found to produce a 7 % reduction in the negative conductance and the P RF of the diode. The effect of photo-illumination on the device is also investigated by studying the role of enhanced saturation current on the THz frequency performance of this IMPATT device. A modified double iterative simulation technique developed by the authors is used for this purpose. It is found that (i) the negative conductance and (ii) the negative resistance of the device decrease, while, the frequency of operation and the device quality factor shift upward with increasing saturation current. The upward shift in operating frequency is found to be more (~ 65 GHz) when the device performance is controlled by the hole saturation current rather than by the electron dominated saturation current. These results thus indicate that 4H-SiC DDR IMPATT diode is highly photo-sensitive even at THz range of frequencies.
16 citations
"An opto-sensitive InP based IMPATT ..." refers result in this paper
...This trend is similar to the previously observed trend in case of 4HSiC IMPATT at THz region [8]....
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