Journal ArticleDOI
An X-ray photoelectron study of the dependence of HF concentration on an etched silicon surface
E.T.Paul Benny,J. Majhi +1 more
Reads0
Chats0
TLDR
Using X-ray photoelectron spectroscopy, the chemical state of a silicon surface treated with hydrofluoric acid and the resulting contaminant species (fluorine, carbon and oxygen) were studied as a function of the etchant concentration.About:
This article is published in Journal of Electron Spectroscopy and Related Phenomena.The article was published on 1992-06-01. It has received 12 citations till now. The article focuses on the topics: Isotropic etching & Silicon.read more
Citations
More filters
Journal ArticleDOI
Effect of preoxidation treatment on the I-V and C-V characteristics of Si/SiO2/Al MIS diodes
J. Majhi,E T Paul Benny +1 more
TL;DR: In this article, the I-V and C-V characteristics of MIS diodes fabricated on silicon surfaces treated with 5% HF were investigated and it was observed that the ideality factor n = 1.25, density of interface states Dit = 9 × 1011/ cm-2 eV-1, effective barrier height Vb = 0.74 V, open-circuit voltage Voc =0.28 V, and density of fixed oxide charges Q 0~1011 cm 2 of 5%HF treated dioded are lower than those of untreated devices
Journal ArticleDOI
Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.
TL;DR: In this article, the authors investigated the SiO2 etching process using in situ Fourier transformed infrared spectroscopy (FTIR) and x-ray photoelectron spectrograph (XPS) in an attempt to explain the initiation mechanism and reaction kinetics of the siO2 and the surface termination on the resulting Si surface.
References
More filters
Journal ArticleDOI
High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold
TL;DR: In this paper, high-resolution gold-valence-band photoemission spectra were obtained by the use of monochromatized k-ensuremath-alpha (kα) radiation and a single-crystal specimen.
Journal ArticleDOI
Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV.
TL;DR: In this article, the results of photoelectric cross-sections for the Kα lines of magnesium at 1254 eV and of aluminum at 1487 eV were given for Z values up to 96.
Journal ArticleDOI
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
TL;DR: In this article, a low temperature thermal cleaning method for Si molecular beam epitaxy (MBE) is proposed, which consists of wet chemical treatment to eliminate carbon contaminants on Si substrates, thin oxide film formation to protect the clean Si surface from contamination during processing before MBE growth, and desorption of the thin oxide films under UHV.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: Polarized internal reflection spectroscopy has been used to characterize HF-treated Si(111) surfaces as mentioned in this paper, and the silicon-hydrogen stretching vibrations indicate that the surface is well ordered, but is microscopically rough, with coupled monohydride, dihydride and trihydride termination.