Journal ArticleDOI
An X-ray photoelectron study of the dependence of HF concentration on an etched silicon surface
E.T.Paul Benny,J. Majhi +1 more
Reads0
Chats0
TLDR
Using X-ray photoelectron spectroscopy, the chemical state of a silicon surface treated with hydrofluoric acid and the resulting contaminant species (fluorine, carbon and oxygen) were studied as a function of the etchant concentration.About:
This article is published in Journal of Electron Spectroscopy and Related Phenomena.The article was published on 1992-06-01. It has received 12 citations till now. The article focuses on the topics: Isotropic etching & Silicon.read more
Citations
More filters
Journal ArticleDOI
Characterization of a Surface Coating Formed from Carboxylic Acid-Based Coolants
TL;DR: In this paper, the surface films formed under these dynamic heat-transfer conditions are characterized with the use of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) is also used for the study and characterization of the surface film formed.
Patent
Olefin metathesis catalyst
Simon G. Kukes,Robert L Banks +1 more
TL;DR: In this article, a catalyst comprising an inorganic refractory oxide support containing at least one of tungsten oxide and molybdenum oxide and a promoting amount of at least a methylating agent under conditions suitable for the methylating agents to promote the activity of the oxides for the disproportionation reaction.
Journal ArticleDOI
Angle-resolved and depth profiling XPS investigation of a monolayer niobium oxide catalyst
TL;DR: In this paper, a combination of conventional, angle-resolved and depth profiling X-ray photoelectron spectroscopy (XPS) was used to characterize the Niobic acid monolayer.
Journal ArticleDOI
Olefin metathesis catalyst.: III. Angle-resolved XPS and depth profiling study of a tungsten oxide layer on silica
TL;DR: In this paper, a model support consisting of a thin layer of SiO2 on a Silicon single crystal has been used to study the [W]n+/SiO2/Si (100) model catalyst precursor prepared by a controlled reaction of π-C5H5W(CO)3Cl with the SiO 2 surface.
Journal ArticleDOI
Scanning tunneling microscopy and spectroscopy of tungsten oxide thin films in air
TL;DR: In this article, X-ray photoelectron spectroscopy valence band measurements have evidenced a structure near the Fermi level, which has been assigned to a structural oxygen deficiency of the deposited films, which is also observed in the conductance curve of some samples.
References
More filters
Journal ArticleDOI
Evidence of dissociation of water on the Si(100)2 × 1 surface
Yves J. Chabal,S. B. Christman +1 more
TL;DR: In this paper, high-resolution infrared spectroscopy of the Si(100)2 \ifmmode\times\else\texttimes\fi{} 1 surface upon water exposure shows that, in the temperature range investigated (80 to 500 K), the adsorption is dissociative.
Journal ArticleDOI
SiSiO2 interface characterization by ESCA
TL;DR: In this article, the concentration profiles of oxide films on Si have been studied by using ESCA and ellipsometry, and the oxide films were found to be composed mostly of stoichiometric SiO 2 with a very thin (about 0.3 nm) layer of SiO at the SiSiO 2 interface.
Journal ArticleDOI
Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on silicon
TL;DR: In this article, the surface chemistry of silicon exposed to reactive XeF2 gas and the chemisorption of SiF4 on Si at −150 and 25 °C have been studied using XPS and AES.
Journal ArticleDOI
Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results
TL;DR: In this paper, X-ray photoelectron spectroscopy and ion scattering spectrograms were used to understand the chemical termination leading to the near ideal electrical passivation of silicon surfaces.
Journal ArticleDOI
X‐ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H films
TL;DR: In this paper, the authors used X-ray photoelectron spectroscopy (XPS) and AES to characterize the air-exposed and sputter-cleaned surfaces of glow-discharge-produced Si1−xCx:H (x=0.05 to 0.90) films.