Journal ArticleDOI
An X-ray photoelectron study of the dependence of HF concentration on an etched silicon surface
E.T.Paul Benny,J. Majhi +1 more
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TLDR
Using X-ray photoelectron spectroscopy, the chemical state of a silicon surface treated with hydrofluoric acid and the resulting contaminant species (fluorine, carbon and oxygen) were studied as a function of the etchant concentration.About:
This article is published in Journal of Electron Spectroscopy and Related Phenomena.The article was published on 1992-06-01. It has received 12 citations till now. The article focuses on the topics: Isotropic etching & Silicon.read more
Citations
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Journal ArticleDOI
Characterization of a Surface Coating Formed from Carboxylic Acid-Based Coolants
TL;DR: In this paper, the surface films formed under these dynamic heat-transfer conditions are characterized with the use of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) is also used for the study and characterization of the surface film formed.
Patent
Olefin metathesis catalyst
Simon G. Kukes,Robert L Banks +1 more
TL;DR: In this article, a catalyst comprising an inorganic refractory oxide support containing at least one of tungsten oxide and molybdenum oxide and a promoting amount of at least a methylating agent under conditions suitable for the methylating agents to promote the activity of the oxides for the disproportionation reaction.
Journal ArticleDOI
Angle-resolved and depth profiling XPS investigation of a monolayer niobium oxide catalyst
TL;DR: In this paper, a combination of conventional, angle-resolved and depth profiling X-ray photoelectron spectroscopy (XPS) was used to characterize the Niobic acid monolayer.
Journal ArticleDOI
Olefin metathesis catalyst.: III. Angle-resolved XPS and depth profiling study of a tungsten oxide layer on silica
TL;DR: In this paper, a model support consisting of a thin layer of SiO2 on a Silicon single crystal has been used to study the [W]n+/SiO2/Si (100) model catalyst precursor prepared by a controlled reaction of π-C5H5W(CO)3Cl with the SiO 2 surface.
Journal ArticleDOI
Scanning tunneling microscopy and spectroscopy of tungsten oxide thin films in air
TL;DR: In this article, X-ray photoelectron spectroscopy valence band measurements have evidenced a structure near the Fermi level, which has been assigned to a structural oxygen deficiency of the deposited films, which is also observed in the conductance curve of some samples.
References
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Journal ArticleDOI
Reaction of atomic fluorine with silicon
TL;DR: The etch rate of Si with F atoms was measured by the use of F2 microwave plasma over a range of discharge pressures between 2.7×10−2 and 17 Pa as discussed by the authors.
Journal ArticleDOI
A vapour etching technique for the photolithography of silicon dioxide
P.J. Holmes,J.E. Snell +1 more
TL;DR: In this paper, the vapour of hydrofluoric acid attacks silicon dioxide at room temperatures, at a rate comparable to that of the buffered solution of the acid normally used as the etchant for the photolithographic stage of planar silicon device technology.
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Effect of SiO2 surface chemistry on the oxidation of silicon
TL;DR: In this article, it was shown that the retardation in the silicon oxidation rate associated with an ammonium hydroxide-hydrogen peroxide preclean is due to trace amounts of aluminum in the region of the SiO2 surface.
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A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation Density in Silicon Molecular Beam Epitaxy
TL;DR: In this paper, a strong correlation was found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer of silicon.
Journal ArticleDOI
Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films
TL;DR: In this paper, the effects of two substrate-surface cleaning procedures were studied for solid-phase epitaxy of amorphous Si (a-Si) films with respect to crystalline quality.