Journal ArticleDOI
Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells
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TLDR
Theoretical analysis showed that the high optical absorption coefficient of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV.Abstract:
Feasibility of combining p-type crystalline Si (c-Si) of 200―8000 nm in thickness with an n-type bismuth sulfide (Bi 2 S 3 ) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (10 5 cm ―1 ) of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi 2 S 3 on (p) c-Si, J sc is 3 mA/cm 2 ; V oc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm 2 , 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb 2 S 3 (40 nm) thin film as an antireflective coating on Bi 2 S 3 , produced: J sc of 10 mA/cm 2 ; V oc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: J sc of 26 mA/cm 2 ; V oc of 600 mV; and η of 10%.read more
Citations
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Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers
TL;DR: This review looks beyond MAPI to other ns2 solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies, and discusses the ideal properties essential to produce highly efficient solar cells.
Journal ArticleDOI
A new strategy for methylated DNA detection based on photoelectrochemical immunosensor using Bi2S3 nanorods, methyl bonding domain protein and anti-his tag antibody
TL;DR: A novel photoelectrochemical immunosensor for assay of DNA methylation, where Bi2S3 nanorods were used as photoelectric conversion material, MBD1 protein was used asDNA methylation recognizing unit, and anti-his tag antibody was used to further inhibit the photocurrent and increase the detection sensitivity.
Journal ArticleDOI
Influence of defects and dopants on the photovoltaic performance of Bi2S3: first-principles insights
TL;DR: In this paper, the authors showed that the photovoltaic efficiency of Bi2S3 solar cells is limited by its intrinsic point defects, i.e., both S vacancy and S interstitial can have high concentration and produce deep defect levels in the bandgap, leading to non-radiative recombination of electron-hole carriers and reduced minority carrier lifetime.
Journal ArticleDOI
TiO2 Sensitization with Bi2S3 Quantum Dots: The Inconvenience of Sodium Ions in the Deposition Procedure
TL;DR: In this article, the authors highlight the inconvenience of sodium ions in the Bi2S3 deposition procedure, on the TiO2 surface, for the conversion efficiency of the sensitized solar cells derived from these materials.
Journal ArticleDOI
Rapid thermal evaporation of Bi2S3 layer for thin film photovoltaics
Huaibing Song,Huaibing Song,Xiaojun Zhan,Xiaojun Zhan,Deng-Bing Li,Deng-Bing Li,Ying Zhou,Ying Zhou,Bo Yang,Bo Yang,Kai Zeng,Kai Zeng,Jie Zhong,Jie Zhong,Xiangshui Miao,Jiang Tang,Jiang Tang +16 more
TL;DR: In this article, a rapid thermal evaporation (RTE) method with simple facility and extremely fast deposition speed was introduced to produce high quality Bi2S3 films for thin-film photovoltaic applications.
References
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
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Absolute Electronegativity and Hardness: Application to Inorganic Chemistry
TL;DR: In this article, the recent concepts of absolute electronegativity, {chi}, and absolute hardness, {eta}, are briefly reviewed and experimental results for a large number of molecules and radicals are presented.