Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes 14 N and 15 N
TL;DR: In this article, the transport properties of electron in isotopically mixed Ga 14 N 15 N alloy channels have been studied and different ratio of isotopes has been considered and their effect on the alloy scattering phenomenon of specimen is studied.
About: This article is published in Superlattices and Microstructures.The article was published on 2016-12-01. It has received 4 citations till now. The article focuses on the topics: Band gap & Superlattice.
Citations
More filters
TL;DR: In this paper, a review of electron transport in wide energy gap semiconductors is presented, focusing on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium oxide.
Abstract: Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloy often being a wide energy gap semiconductor itself. The electron transport that occurs within zinc-blende gallium arsenide will also be considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, will also be provided. Steady-state and transient electron transport results are presented. The evolution of the field, a survey of the current literature, and some applications for the results presented herein, will also be featured. We conclude our review by presenting some recent developments on the electron transport within these materials. This review is the latest in a series of reviews that have been published on the electron transport processes that occur within the class of wide energy semiconductor materials. The results and references have been updated to include the latest developments in this rapidly evolving field of study.
19 citations
TL;DR: In this paper, the authors have considered the Al14N15N with different ratio of 14N and 15N for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favorable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation.
1 citations
TL;DR: In this paper, the authors presented several transport properties of InAlN/AlN superlattice MOSFET by considering 14N and 15N isotopes and investigated the carrier mobility and drain current.
TL;DR: In this paper, the vital transport properties of AlGaN/Ga 14 N 15 N superlattice based MOSFET by considering 14 N and 15 N isotopes in the well region were studied.
References
More filters
TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.
Abstract: Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.
1,194 citations
TL;DR: In this paper, the authors review materials growth, device physics, design, fabrication, and performance of DUV LEDs with wavelength ranging from 210 to 365 nm and describe prototype systems for water purification and sterilization.
Abstract: Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new applications for air, water, and surface sterilization and decontamination, bioagent detection and identification, UV curing, and biomedical and analytical instrumentation. We review materials growth, device physics, design, fabrication, and performance of DUV LEDs with wavelength ranging from 210 to 365 nm, describe prototype systems for water purification and sterilization, and discuss other emerging applications and systems using DUV LEDs.
275 citations
Patent•
20 Feb 2014TL;DR: In this article, a method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n type contact layer, is provided.
Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
236 citations
TL;DR: In this article, the transport properties of both electron and hole in bulk wurtzite phase GaN in the high electric field domain are presented by using an ensemble Monte Carlo (EMC) method.
Abstract: The transport properties of both electron and hole in bulk wurtzite phase GaN in the high electric field domain are presented by using an ensemble Monte Carlo (EMC) method. In our EMC simulation, the impact ionization process, which is seldom studied due to the lack of experimental data, is included. The impact ionization is treated as an additional scattering mechanism, and the impact ionization rate is described by the Keldysh formula, with the parameters in the formula determined by fitting the simulation results to the numerical calculation results. Such a treatment makes it convenient to simulate the impact ionization initiated by either an electron or hole with the EMC method compared to the previous study of carrier transport properties in GaN up to the high field. Steady-state properties of carriers under an applied electric field up to 1 MV/cm are presented and analyzed. Particularly, the impact ionization process here is further studied and detailed discussions are also given. It is found that the impact ionization coefficients of both the electron and hole upon applied electric field can be described by two simple experiential equations. Moreover, for the first time, to the best of our knowledge, we obtain the ratio of the electron impact ionization coefficient to the hole impact ionization coefficient in wurtzite GaN and find out that it can be smaller than that in InP, which means wurtzite GaN may have good gain noise behaviors according to the present noise theories.
55 citations