Analytical Design and Simulation Studies of Super-junction Power MOSFET
TL;DR: Using the super-junction theory, an analytical design methodology for high voltage Super-Junction power MOSFET, which offers very low on resistance as compared with VDMOS power device due to higher doping density in the drift region, was developed in this paper.
Abstract: Using the super-junction theory we develop an analytical design methodology for high voltage Super-junction power MOSFET, which offers very low on resistance as compared with VDMOS power device due to higher doping density in the drift region. This method is used to analytically design various rating super-junction power MOSFET and using simulation tools, the validity of this method is established and then used to study the physical mechanisms underlying the device operation.
"Analytical Design and Simulation St..." refers background in this paper
...as tepi increases, The difference between simulated and analytical BV increases at higher thickness values due to analytical assumptions in design equations[ 6-8 ]....
...At Vgs=6V and 8V the conducting JFET region is pinched off near the top neck region and as gate voltage increases the JFET conducting region opens up for current flow and then accumulation region forms below the gate in the n column which helps in establishing a high drain current [ 6 ]...
...Finally, at about 30 V the drift velocity saturates [ 6 ] the small current increase in drain current beyond Vds=30 V is possible only by increasing the width of the conducting channel in the n pillar....
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