Analytical Model for Drain Current of a Ballistic MOSFET
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...To overcome these issues, new novel device structures are introduced, such as multi-gate MOSFETs, which are classified as a double gate, Triple gate, and cylindrical surrounding gate [5-7]....
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"Analytical Model for Drain Current ..." refers background or methods in this paper
...The parameters, as shown in Table 1, are used throughout this work [33]....
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...At low temperatures, when only one sub-band is occupied, approximately 80% of the charge carriers are contributed from the lowest level [33]....
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843 citations
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...These terms apart from other parameters depend on effective channel length and junction depth [35]....
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"Analytical Model for Drain Current ..." refers background in this paper
...[23] have presented a unified framework for assessing the performance limit of MOSFETs by properly treating two dimensional electrostatics in the quantum capacitance limit....
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