Analytical modeling of silicon thermoelectric microcooler
TL;DR: In this article, an analytical thermal model for silicon microcooler, which couples Peltier cooling with heat conduction and heat generation in the silicon substrate, and which includes heat convection and heat generating in the metal lead, is derived and used to study the thermal characteristics of silicon thermoelectric microcoolers.
Abstract: Due to its inherently favorable properties, doped single-crystal silicon has potential application as an on-chip thermoelectric microcooler for advanced integrated circuits. In this paper, an analytical thermal model for silicon microcooler, which couples Peltier cooling with heat conduction and heat generation in the silicon substrate, and which includes heat conduction and heat generation in the metal lead, is derived and used to study the thermal characteristics of silicon thermoelectric microcoolers. The analytical modeling results are shown to be in good agreement with the experimental data and the results from electrothermal numerical simulations. The effects of metal lead, electric contact resistance, silicon doping concentrations, and microcooler sizes on the cooling performance are investigated. The cooling potential of such thermoelectric devices, represented by peak cooling and maximum cooling heat flux on the microcooler surface, is addressed.
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25 Sep 2006
TL;DR: In this paper, a review of recent advances in nanoscale thermal and thermoelectric transport with an emphasis on the impact on integrated circuit (IC) thermal management is presented.
Abstract: In this paper we review recent advances in nanoscale thermal and thermoelectric transport with an emphasis on the impact on integrated circuit (IC) thermal management. We will first review thermal conductivity of low-dimensional solids. Experimental results have shown that phonon surface and interface scattering can lower thermal conductivity of silicon thin films and nanowires in the sub-100-nm range by a factor of two to five. Carbon nanotubes are promising candidates as thermal vias and thermal interface materials due to their inherently high thermal conductivities of thousands of W/mK and high mechanical strength. We then concentrate on the fundamental interaction between heat and electricity, i.e., thermoelectric effects, and how nanostructures are used to modify this interaction. We will review recent experimental and theoretical results on superlattice and quantum dot thermoelectrics as well as solid-state thermionic thin-film devices with embedded metallic nanoparticles. Heat and current spreading in the three-dimensional electrode configuration, allow removal of high-power hot spots in IC chips. Several III-V and silicon heterostructure integrated thermionic (HIT) microcoolers have been fabricated and characterized. They have achieved cooling up to 7 degC at 100 degC ambient temperature with devices on the order of 50 mum in diameter. The cooling power density was also characterized using integrated thin-film heaters; values ranging from 100 to 680 W/cm2 were measured. Response time on the order of 20-40 ms has been demonstrated. Calculations show that with an improvement in material properties, hot spots tens of micrometers in diameter with heat fluxes in excess of 1000 W/cm2 could be cooled down by 20 degC-30 degC. Finally we will review some of the more exotic techniques such as thermotunneling and analyze their potential application to chip cooling
215 citations
01 Jan 2006
TL;DR: This paper reviews recent advances in nanoscale thermal and thermoelectric transport with an emphasis on the impact on integrated circuit (IC) thermal management and focuses on the fundamental interaction between heat and electricity, i.e., thermoeLECTric effects, and how nanostructures are used to modify this interaction.
Abstract: In this paper we review recent advances in nanoscale thermal and thermoelectric transport with an emphasis on the impact on integrated circuit (IC) thermal management. We will first review thermal conductivity of low- dimensional solids. Experimental results have shown that phonon surface and interface scattering can lower thermal con- ductivity of silicon thin films and nanowires in the sub-100-nm range by a factor of two to five. Carbon nanotubes are promising candidates as thermal vias and thermal interface materials due to their inherently high thermal conductivities of thousands of W/mK and high mechanical strength. We then concentrate on the fundamental interaction between heat and electricity, i.e., thermoelectric effects, and how nanostructures are used to modify this interaction. We will review recent experimental and theoretical results on superlattice and quantum dot thermoelectrics as well as solid-state thermionic thin-film devices with embedded metallic nanoparticles. Heat and current spreading in the three-dimensional electrode configuration, allow removal of high-power hot spots in IC chips. Several III-V and silicon heterostructure integrated thermionic (HIT) microcoolers have been fabricated and char- acterized. They have achieved cooling up to 7 � C at 100 � C ambient temperature with devices on the order of 50 � mi n diameter. The cooling power density was also characterized using integrated thin-film heaters; values ranging from 100 to 680 W/cm 2 were measured. Response time on the order of 20-40 ms has been demonstrated. Calculations show that with an improvement in material properties, hot spots tens of micrometers in diameter with heat fluxes in excess of 1000 W/cm 2 could be cooled down by 20 � C-30 � C. Finally we will review some of the more exotic techniques such as thermotunneling and analyze their potential application to chip cooling.
182 citations
Cites background from "Analytical modeling of silicon ther..."
...This could provide a useful source of information about phonons and their transport in solids [26]....
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TL;DR: A quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples is proposed.
Abstract: As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this paper, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing, and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models, and thermal network models, respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.
171 citations
Cites background from "Analytical modeling of silicon ther..."
...Such as, advanced thermoelectric (TE) solid-state cooling technology, based on polycrystallineminiaturized TE cooler (TEC) [128], [129], minicontact enhancement technology [130], [131], silicon and germanium substrate self-cooling [132], [133], and nanostructured superlattice TEC [134], [135]....
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TL;DR: The physical phenomena underpinning the most promising on-chip thermal management approaches for hot spot remediation, along with basic modeling equations and typical results are described in this paper, where attention is devoted to thermoelectric microcoolers.
Abstract: The rapid emergence of nanoelectronics, with the consequent rise in transistor density and switching speed, has led to a steep increase in microprocessor chip heat flux and growing concern over the emergence of on-chip “hot spots”. The application of on-chip high heat flux cooling techniques is today a primary driver for innovation in the electronics industry. In this paper, the physical phenomena underpinning the most promising on-chip thermal management approaches for hot spot remediation, along with basic modeling equations and typical results are described. Attention is devoted to thermoelectric microcoolers — using mini-contcat enhancement and in-plane thermoelectric currents, orthotropic TIM’s/heat spreaders, and phase-change microgap coolers.Copyright © 2009 by ASME
143 citations
References
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01 Jan 1973TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Abstract: CRC handbook of chemistry and physics , CRC handbook of chemistry and physics , کتابخانه مرکزی دانشگاه علوم پزشکی تهران
52,268 citations
TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Abstract: Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.
4,921 citations
14 Jul 1995
TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Abstract: Introduction, D.M. Rowe General Principles and Theoretical Considerations Thermoelectric Phenomena, D.D. Pollock Coversion Efficiency and Figure-of-Merit, H.J. Goldsmid Thermoelectric Transport Theory, C.M. Bhandari Optimization of Carrier Concentration, C.M. Bhandari and D.M. Rowe Minimizing the Thermal Conductivity, C.M. Bhandari Selective Carrier Scattering in Thermoelectric Materials, Y.I. Ravich Thermomagnetic Phenomena, H.J. Goldsmid Material Preparation Preparation of Thermoelectric Materials from Melts, A. Borshchevsky Powder Metallurgy Techniques, A.N. Scoville PIES Method of Preparing Bismuth Alloys, T. Ohta and T. Kajikawa Preparation of Thermoelectric Materials by Mechanical Alloying, B.A. Cook, J.L. Harringa, and S.H. Han Preparation of Thermoelectric Films, K. Matsubara, T. Koyanagi, K. Nagao, and K. Kishimoto Measurement of Thermoelectric Properties Calculation of Peltier Device Performance, R.J. Buist Measurements of Electrical Properties, I.A. Nishida Measurement of Thermal Properties, R. Taylor Z-Meters, H.H. Woodbury, L.M. Levinson, and S. Lewandowski Methodology for Testing Thermoelectric Materials and Devices, R.J. Buist Thermoelectric Materials Bismuth Telluride, Antimony Telluride, and Their Solid Solutions, H. Scherrer and S. Scherrer Valence Band Structure and the Thermoelectric Figure-of-Merit of (Bi1-xSbx)Te3 Crystals, M. Stordeur Lead Telluride and Its Alloys, V. Fano Properties of the General Tags System, E.A. Skrabek and D.S. Trimmer Thermoelectric Properties of Silicides, C.B. Vining Polycrystalline Iron Disilicide as a Thermoelectric Generator Material, U. Birkholz, E. Gross, and U. Stohrer Thermoelectric Properties of Anisotropic MnSi1.75 , V.K. Zaitsev Low Carrier Mobility Materials for Thermoelectric Applications, V.K. Zaitsev, S.A. Ktitorov, and M.I. Federov Semimetals as Materials for Thermoelectric Generators, M.I. Fedorov and V.K. Zaitsev Silicon Germanium, C.B. Vining Rare Earth Compounds, B.J. Beaudry and K.A. Gschneidner, Jr. Thermoelectric Properties of High-Temperature Superconductors, M. Cassart and J.-P. Issi Boron Carbides, T.L. Aselage and D. Emin Thermoelectric Properties of Metallic Materials, A.T. Burkov and M.V. Vedernikov Neutron Irradiation Damage in SiGe Alloys, J.W. Vandersande New Materials and Performance Limits for Thermoelectric Cooling, G.A. Slack Thermoelectric Generation Miniature Semiconductor Thermoelectric Devices, D.M. Rowe Commercially Available Generators, A.G. McNaughton Modular RTG Technology, R.F. Hartman Peltier Devices as Generators, G. Min and D.M. Rowe Calculations of Generator Performance, M.H. Cobble Generator Applications Terrestrial Applications of Thermoelectric Generators, W.C. Hall Space Applications, G.L. Bennett SP-100 Space Subsystems, J.F. Mondt Safety Aspects of Thermoelectrics in Space, G.L. Bennett Low-Temperature Heat Conversion, K. Matsuura and D.M. Rowe Thermoelectric Refrigeration Introduction, H.J. Goldsmid Module Design and Fabrication, R. Marlow and E. Burke Cooling Thermoelements with Superconducting Leg, M.V. Vedernikov and V.L. Kuznetsov Applications of Thermoelectric Cooling Introduction, H.J. Goldsmid Commercial Peltier Modules, K.-I. Uemura Thermoelectrically Cooled Radiation Detectors, L.I. Anatychuk Reliability of Peltier Coolers in Fiber-Optic Laser Packages, R.M. Redstall and R. Studd Laboratory Equipment, K.-I. Uemura Large-Scale Cooling: Integrated Thermoelectric Element Technology, J.G. Stockholm Medium-Scale Cooling: Thermoelectric Module Technology, J.G. Stockholm Modeling of Thermoelectric Cooling Systems, J.G. Stockholm
4,192 citations
TL;DR: In this article, it is shown that the experimental results find a natural explanation in terms of this model: Conduction is by hopping when the concentration of electrons is low and the Fermi energy lies below ${E}_{c}$; but when higher and the concentration is higher, conduction is by the usual band mechanism with a short mean free path.
Abstract: Anderson has shown that there is no diffusion of an electron in certain random lattices, and Mott has pointed out that, for electrons in materials in which there is a potential energy varying in a random way from atom to atom, Anderson's work predicts that there should be a range of energies at the bottom of the conduction band for which an electron can move only by thermally activated hopping from one localized state to another. An energy ${E}_{c}$ will separate the energies where this happens from the nonlocalized range of energies where there is no thermal activation. Cerium sulfide, investigated some years ago by Cutler and Leavy, is a particularly suitable material testing whether this is so because, in the neighborhood of the composition ${\mathrm{Ce}}_{2}$${\mathrm{S}}_{3}$, $\frac{1}{9}$ of the cerium sites are vacancies distributed at random, and the number of free electrons can be varied with only very small changes in the number of vacancies. It is shown that the experimental results find a natural explanation in terms of this model: Conduction is by hopping when the concentration of electrons is low and the Fermi energy ${E}_{F}$ lies below ${E}_{c}$; but when the concentration is higher and ${E}_{F}g{E}_{c}$, conduction is by the usual band mechanism with a short mean free path. The thermoelectric power is examined in both ranges, and the Hall mobility in the hopping region (${E}_{F}l{E}_{c}$) seems in fair agreement with the theory of Holstein and Friedman.
905 citations