Journal ArticleDOI
Annealing and thickness effects on the electrical resistance of vacuum-deposited tin antimonide alloy films
V. Damodara Das,M.S. Jagadeesh +1 more
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In this article, the initial lattice distortion energy spectra of the films have been determined from the resistance-temperature data, and it is found that the resistivity values for films of different thicknesses are in good agreement with the size effect theory.About:
This article is published in Thin Solid Films.The article was published on 1974-12-01. It has received 23 citations till now. The article focuses on the topics: Antimonide & Electrical resistance and conductance.read more
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Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin films
TL;DR: In this paper, optical absorption data, optical band gap and the nature of the forbidden energy gap in the indium oxide thin films have been determined by measuring their optical absorbance as a function of wavelength.
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Thickness dependence of defect density in silver films
TL;DR: In this article, the authors measured the defect density and activation energy of an annealed polycrystalline polysilicon film of thickness 270-1670 A. The defect density F 0 (E ) max varies considerably from 21.4 to 5.25 μΩ cm eV -1 in the thickness range of 270 -1670
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Influence of annealing temperature on physical properties of Sn-doped CdO thin films by nebulized spray pyrolysis technique
TL;DR: In this paper, the same authors used X-ray diffraction to study the surface morphology of thin cadmium oxide (CdO) films and found that they were polycrystalline with major reflection along the 1 1 1/1/1 plane and the crystallite size increased at elevated annealing temperatures.
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Ellipsometric studies on cupric telluride thin films
TL;DR: The optical properties of cupric telluride (CuTe) thin films have been studied in the wavelength range 310-800 nm using spectroscopic ellipsometry (SE) as discussed by the authors.
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Modified equations for the evaluation of energy distribution of defects in as‐grown thin films by Vand’s theory
TL;DR: In this paper, it was shown that the use of Vand's original equations for the evaluation of defect density distribution in energy in as-grown thin films lead to results which are in error by at least 6% in the case of thin films vacuum deposited at room temperature.
References
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Journal ArticleDOI
Kinetics of Processes Distributed in Activation Energy
TL;DR: In this article, the effects produced by the initial distribution, the order of reaction, and the frequency factor are discussed, as well as the complications which can result from successive reactions and varying frequency factors.
Journal ArticleDOI
Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°K
C. J. Meechan,J. A. Brinkman +1 more
TL;DR: In this paper, the electrical resistivity change produced in copper by 1.25-Mev electron irradiation at 80.5 K was measured and the recovery of this change upon annealing has been studied.
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Properties of Gold Deposited at Liquid Air Temperature
P. G. Wilkinson,L. S. Birks +1 more
TL;DR: The number of defects and their characteristic decay energy increased rapidly with increasing rate of deposit in the range from 1 to 5 micrograms/cm2/min. as discussed by the authors showed that the gold film was made up of aggregations of discreet particles rather than a smooth continuous film.