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Journal ArticleDOI

Anomalous temperature dependence of thermoelectric power of PbTe thin films

V. Damodara Das, +1 more
- 01 Nov 1983 - 
- Vol. 54, Iss: 11, pp 6641-6645
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TLDR
In this paper, thin films of thicknesses ranging from 400 to 4000 A have been prepared by vacuum evaporation at a pressure of 5×10−5 Torr on clean glass substrates held at room temperature.
Abstract
PbTe thin films of thicknesses ranging from 400 to 4000 A have been prepared by vacuum evaporation at a pressure of 5×10−5 Torr on clean glass substrates held at room temperature. The thermoelectromotive force of these films has been measured in the temperature range 300–600 K. It is found that thermoelectric power, SF varies anomalously with temperature, being constant at lower temperatures, and rapidly decreasing at higher temperatures. SF is found to be positive indicating that the samples are p type. The anomalous behavior is explained by assuming that at higher temperatures additional donor levels are generated due to creation and ionization of defects in the system.

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Journal ArticleDOI

Thermoelectric properties of PbTe thin films prepared by gas evaporation method

TL;DR: In this article, a thin film with fine grains was successfully fabricated by the gas evaporation method, and the authors attributed the decrease in carrier mobility exceeding the increase in carrier concentration with decreasing grain size.
Journal ArticleDOI

Study of scattering of charge carriers in thin films of (Bi0.25Sb0.75)2Te3 alloy with 2% excess Te

TL;DR: In this article, the Jain-Verma theory of carrier energy dependent relaxation time was applied to the thermoelectric data of thin films to understand the nature of scattering mechanisms in this material.
Journal ArticleDOI

Temperature variation of thermoelectric power of vacuum deposited PbSe thin films and its thickness dependence

TL;DR: In this paper, the thermoelectric power of PbSe thin films has been evaluated as a function of temperature in the range 300 to 500 K from the thermal e.m.f. data.
Journal ArticleDOI

Electrical properties of crystalline PbxSn1−xTe0.5Se0.5 thin films

TL;DR: In this article, the authors studied the energy gap and activation energy of PbxSn 1.5 films with x ¼ 0.4, 0.6, 0, 0., 0.8, and 1 layers for annealed at 473 K in the temperature range 300-473 K, while the Hall voltage was investigated at room temperature.
Journal ArticleDOI

Thermoelectric behaviour of (Bi0.5Sb0.5)2Te3 semiconducting alloy thin films

TL;DR: In this article, the Jain-Verma theory has been applied to the thermoelectric data of vacuum flash-evaporated and annealed polycrystalline thin films of (Bi 0.5Sb0.5)2Te3 alloys of different thicknesses to study the nature of principal carrier scattering mechanism and also to know the extent of other scattering mechanisms.
References
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Thin film phenomena

Journal ArticleDOI

GaAs concentrator solar cell

L. W. James, +1 more
TL;DR: In this article, an experimental 1/2−in.−diam cell was operated in air mass 1.4 sunlight with an output power density of 4.52 W/cm2 at an effective concentration of 312 suns with a power conversion efficiency of 17.5%.
Journal ArticleDOI

The electronic and optical properties of the lead sulphide group of semi-conductors

TL;DR: In this article, the authors used the Hall-constant and conductivity as a function of temperature to determine the width of the forbidden energy gap of a semi-conductor.
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