Journal ArticleDOI
Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature
V. Damodara Das,N. Jayaprakash +1 more
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TLDR
In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.About:
This article is published in Vacuum.The article was published on 1981-03-01. It has received 9 citations till now. The article focuses on the topics: Bismuth & Annealing (metallurgy).read more
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Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures
V. Damodara Das,N. Meena +1 more
TL;DR: In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.
Journal ArticleDOI
Variation of energy gap and resistivity minimum position with thickness in bismuth thin films
V. Damodara Das,S. Vaidehi +1 more
TL;DR: In this paper, Wismuth thin films of different thicknesses between about 20 and 225 nm are vacuum deposited at room temperature in a vacuum of 3 × 10−3 Pa. The films are heat-treated "in situ" and the resistances monitored.
Journal ArticleDOI
Semiconducting behaviour of thin bismuth films vacuum-deposited at different substrate temperatures
V. Damodara Das,S. Vaidehi +1 more
TL;DR: In this article, thin bismuth films were vacuum-deposited onto glass substrates at different substrate temperatures in a vacuum of 2×10−5 torr, and the resistance of the films has been measured as a function of temperature in situ during and after annealing.
Journal ArticleDOI
Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure
TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
References
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Journal ArticleDOI
Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys
TL;DR: The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2 to 300 K as discussed by the authors.
Journal ArticleDOI
Size effect in the electrical properties of thin epitaxial bismuth films
Hajime Asahi,Akira Kinbara +1 more
TL;DR: The thickness dependence of the electrical properties of thin epitaxial bismuth films (of thickness 2-3 μm) was studied at 42 and 77 K in this article.
Journal ArticleDOI
Quantum and classical size effects in the thermoelectric power of thin bismuth films
D. D. Thornburg,C. M. Wayman +1 more
TL;DR: In this paper, anomalous behavior of the thermoelectric power of thin Bi films has been observed and the results are consistent with those anticipated, based on both quantum and classical size effects in scattering.
Journal ArticleDOI
Kinetic properties of electrons in bismuth thin films
Yu. F. Komnik,V.V. Andrievsky +1 more
TL;DR: In this article, the magnetic field dependence of σ xx and σ yx, calculated from an analysis of the data on ϱ, Δϱ/ϱ and the Hall e.m.f., and using the formula of the two-band model for strong and weak magnetic fields, was obtained.