Applications and Brief Review of Experimental Results
01 Jan 2012-pp 281-327
TL;DR: In this article, the authors have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wavevector space of the charge carriers, respectively.
Abstract: In this book, we have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wave-vector space of the charge carriers, respectively. In this chapter, we discuss few applications in this context in Sect. 14.2 and we shall also present a very brief review of the experimental investigations in Sect. 14.3 which is a sea in itself. Section 14.4 contains the single experimental open research problem.
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01 Jan 2005
TL;DR: In this article, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is < 3nm, and ON-currents when the wires width is > 5nm.
Abstract: This paper examines the validity of the widely-used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (SNWTs). The energy dispersion relations for unrelaxed Si nanowires are first computed by using an sp3d5s* tight-binding model. A semi-numerical ballistic FET model is then adopted to evaluate the I-V characteristics of the (n-type) SNWTs based on both a tight-binding dispersion relation and parabolic energy bands. In comparison with the tight-binding approach, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is<3nm, and ON-currents when the wire width is<5nm. By introducing two analytical equations with two tuning parameters, however, the effective-mass approximation can well reproduce the tight-binding I-V results even at a \~1.36nm wire with.
82 citations
TL;DR: In this article, the authors focus on the band structure of semiconductors and propose a variety of methods such as tight binding, pseudopotential, and k • p methods.
75 citations
Book•
01 Jan 1991
TL;DR: In this paper, the authors present a survey of reliability issues in semiconductors, metals, thin films and coatings, and thin-film and coating applications, and stress-strain and fracture analysis.
Abstract: Part I. Metals Part II. Organic Materials Part III. Semiconductors Part IV. Thin Films and Coatings Part V. Stress-Strain and Fracture Analyses Part VI. Reliability Issues.
23 citations
TL;DR: In this article, the electromagnetic response of linear carbon chains to both static and dynamics fields have been studied, making use of ab-initio methods, and it is found that the associated emission currents, plotted as a function of the bias potential, follow Fowler-Nordheim intensity-voltage curves typical of the field emission of metallic tips.
Abstract: Linear chains of carbon atoms have been proposed as the electron emitting structures of open tip carbon nanotubes subject to an electric field. To better understand the implications of the results of Smalley and collaborators, the electromagnetic response of linear carbon chains to both static and dynamics fields have been studied, making use of ab-initio methods. It is found that the associated emission currents, plotted as a function of the bias potential, follow Fowler-Nordheim intensity-voltage curves typical of the field emission of metallic tips. Under standard bias conditions, linear carbon chains of one nanometer of length are expected to deliver currents of the order of one microampere. These systems behave, furthermore, as conducting needles in photoabsorption processes. Linear carbon chains are thus likely to constitute the ultimate atomic-scale realization of metallic wires.
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TL;DR: In this article, a metallic solid with long-range orientational order, but with icosahedral point group symmetry, which is inconsistent with lattice translations, was observed and its diffraction spots are as sharp as those of crystals but cannot be indexed to any Bravais lattice.
Abstract: We have observed a metallic solid (Al-14-at.%-Mn) with long-range orientational order, but with icosahedral point group symmetry, which is inconsistent with lattice translations. Its diffraction spots are as sharp as those of crystals but cannot be indexed to any Bravais lattice. The solid is metastable and forms from the melt by a first-order transition.
5,702 citations
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
5,638 citations
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Abstract: Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
5,619 citations
Book•
01 Jan 1971TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
4,630 citations
TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
Abstract: The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detail
2,671 citations