Ar ion induced copper germanide phase formation at room temperature
TL;DR: In this paper, the experimental mixing rate and efficiency for this phase are 5·35 nm4 and 10·85 nm5/keV respectively, at doses above 8 × 1015 Ar/cm2 the formation and growth of another copper rich phase Cu5Ge has been observed.
Abstract: The copper germanide phase Cu3Ge which is emerging as an alternative material for making contacts and interconnects for semiconductor industry has been produced across the interface of Cu/Ge bilayers by ion beam mixing at room temperature using 1 MeV Ar ions. The dose dependence of the thickness of the mixed region shows a diffusion controlled mixing process. The experimental mixing rate and efficiency for this phase are 5·35 nm4 and 10·85 nm5/keV respectively. At doses above 8 × 1015 Ar/cm2 the formation and growth of another copper rich phase Cu5Ge has been observed. The present theoretical models are inadequate to explain the observed experimental mixing rate.
Citations
More filters
TL;DR: In this paper, the authors report on the synthesis of Cu3Ge films by exposing Cu films to germane (GeH4) by investigating the influence of the GeH4 partial pressure, the soak temperature, and the soak time on Cu films of different thicknesses.
14 citations
TL;DR: In this article, the synthesis of 2D nano-objects based on low pressure chemical vapor deposition (LPCVD) of Ge2Me6 and a mixture of PbEt4 was reported.
Abstract: Unlike synthesis of nanowires (1D nano-objects) the synthesis of nanoplatelets (2D nano-objects) has not been performed frequently. Herein, we report on the synthesis of Cu–Ge based on nanoplatelets with a high surface-to-volume ratio prepared by low pressure chemical vapor deposition (LPCVD) of Ge2Me6 and a mixture of Ge2Me6/PbEt4. Nanostructured deposits are composed of Cu1-xGex nanoplatelets, Ge nanowires and Ge nanoparticles. The nanoplatelets, which have the lateral size up to several tens of micrometers and thickness of 100–400 nm, belong to the cubic α phase of Cu91Ge9 alloy (Ge admixture in cubic Cu) and hexagonal ζ phase of Cu85Ge15 alloy. Nanowires composed of cubic Ge have a diameter of about 30 nm and length of several tens of micrometers. Lead does not enter any of these phases due to Pb–Cu and Pb–Ge immiscibility; therefore, it was observed as separate nanoparticles.
References
More filters
01 Jun 1985-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: Estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication are provided.
Abstract: A computer program which simulates Rutherford backscattering spectra is currently in use at Cornell University and other institutions. Straggling and detector resolution are among the effects included. Samples are considered to be made up of a finite number of layers, each with uniform composition. The emphasis in the mathematics is on accuracy beyond that of iterated surface approximation methods. Thicker layers can thus be analyzed without a net loss in accuracy. The mathematical description of the sample can then have fewer layers and fewer calculations are required. This paper provides estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication.
2,551 citations
TL;DR: In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
443 citations
TL;DR: In this article, a fractal geometry approach to spike formation is presented, based on an idealized collision cascade constructed from the inverse power potential V(r) √ r−1/m (0).
229 citations
TL;DR: In this article, the basics of the ion mixing phenomenon are described and discussed, and the process is examined by considering only ballistic and kinematic effects associated with collisions between projectile and target atoms, and how collision cascades and the evolution of dense energy spikes affect the mixing process.
Abstract: In this review we shall describe and discuss the basics of the ion mixing phenomenon. First, the process is examined by considering only ballistic and kinematic effects associated with collisions between projectile and target atoms. We shall examine how collision cascades and the evolution of dense energy spikes affect the mixing process. We then show how material properties, such as heat of mixing and cohesive energy, influence the mixing process. These properties lead to the physical basis for the occurrence of temperature-independent and temperature-dependent mixing regimes. Finally, we shall examine the phase formation possibilities in the ion-reacted layer, and how irradiation conditions and various material properties can influence the final structure that forms.
155 citations
TL;DR: In this paper, the authors reported the first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200 °C, with room-temperature resistivity which can be as low as 5.5 μΩ cm.
Abstract: We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200 °C. At these low temperatures, the e‐Cu3Ge phase with a monoclinic crystal structure is formed, with room‐temperature resistivity which can be as low as 5.5 μΩ cm. The films are electrically stable up to at least 600 °C, and, unlike pure copper, are also stable against oxygen and air exposure.
89 citations