Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties
TL;DR: In this paper, room temperature implantation of 60 V Ar+-ions in GaSb to the fluences of 7'×'1016 to 3' ×'1018 ions cm−2 is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer.
Abstract: Room temperature implantation of 60 keV Ar+-ions in GaSb to the fluences of 7 × 1016 to 3 × 1018 ions cm−2 is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb
Citations
More filters
TL;DR: In this article, the effect of fast cluster irradiation on the formation of fibrous structures is investigated for single crystal GaSb surfaces irradiated by Cun+ ions (n = 1-3) with an energy of 0.4
Abstract: The effect of fast cluster irradiation on the formation of fibrous structures is investigated for single crystal GaSb surfaces irradiated by Cun+ ions (n = 1–3) with an energy of 0.4 MeV/atom at ion fluences up to 5 × 1015 cm−2. We study the cluster size dependence on the growth of fibrous network structures. With increasing cluster size, the shape of the fiber changed from rod-like to spherical. To quantitatively evaluate this cluster effect, a fiber diameter d in rod or spherical portion is examined as a function of ion fluence Φ and cluster size n. We find that the fiber diameter nonlinearly increases and follows the relation d∝nα×Φ, with α≈2. This evidently implies that the amount of defects generated by n-sized cluster bombardments varies as n2 for n≤3. Cluster ion irradiation enhances the defect generation owing to the overlap between cascades of individual cluster constituents and is therefore effective for the growth of nanofibers.
10 citations
TL;DR: In this paper, the mesoporous structures with interconnecting nano-fibers (MSINs) are realized by irradiating low energy (50, 75, and 100 keV) beams of Ar petertodd +======-ions normal to the surface of molecular beam epitaxially grown gallium antimonide (GaSb) epi-layer deposited on (100) oriented semi-insulating gallium arsenide substrates.
Abstract: Mesoporous structures with interconnecting nano-fibers (MSINs) are realized by irradiating low energy (50, 75, and 100 keV) beams of Ar
+
-ions normal to the surface of molecular beam epitaxially grown gallium antimonide (GaSb) epi-layer deposited on (100) oriented semi-insulating gallium arsenide (GaAs) substrates. The irradiation of 100 keV Ar
+
-ion beam at fluence of 1 × 10
17
ions/cm
2
provides optimal MSIN structure with distinct nanofibrous network. A physical model for evolution of MSINs with irradiation of energetic Ar
+
-ions at different fluences onto GaSb surface is illustrated as creation of point defects in the form of vacancy and interstitial sites. The ion tracking simulation using the Stopping and Range of Ions in Matter and Transport of Ions in Matter (SRIM-TRIM-2013) software resembles the formation of MSINs with Ar
+
-ion irradiation on GaSb epi-layer. The electron-microscopic, spectroscopic, and crystallographic analysis of the MSINs suggest the presence of nanocrystallites, high degree of oxidation, co-existence of gallium oxide (Ga
2
O
3
) and antimony oxide (Sb
2
O
3
, Sb
2
O
5
), and presence of elemental antimony (Sb) phase in the nanofiber interconnects.
5 citations
TL;DR: In this article, the formation of GaSb nanofoams by ion irradiation of sputter-deposited Ga-Sb films and a comprehensive characterization of its structural and compositional properties are presented.
5 citations
TL;DR: In this paper, the ion irradiation effects on the electronic properties of single crystalline InSb films are compared with results about their crystalline structure and morphology using X-ray diffraction analysis and scanning electron microscopy.
3 citations
TL;DR: In this paper, the formation of interconnected mesoporous structure using low energy (50'keV) Ar+-ion irradiation normal to the GaSb surface for the ion fluence 1'×'1016 and 5'× '1017 ions/cm2.
Abstract: This paper presents formation of interconnected mesoporous structure using low energy (50 keV) Ar+-ion irradiation normal to the GaSb surface for the ion fluence 1 × 1016 and 5 × 1017 ions/cm2. The...
References
More filters
01 Jan 1996
TL;DR: The client would like to get a larger, approximately 3 cm in diameter, well fixed tissue sample, together with a detailed report of the clinical presentation, gross, and microscopic lesions, along with the submission of samples prepared in a similar manner by the client for processing.
Abstract: We wrote it to be read by, and taught to, senior undergraduates and starting graduate students, rather than studied in a research laboratory. We wrote it using the same style and sentence construction that we have used in countless classroom lectures, rather than how we have written our countless (and much-less read) formal scientificpapers. In this respect particularly, wehave been deliberate in notreferencing the sources of every experimental fact or theoretical concept (although we do include some hints and clues in the chapters). However, at the end of each chapter we have included groups of references that should lead you to the best sources in the literature and help you go into more depth as you become more confident about what you are looking for. We are great believers in the value of history as the basis for under- standing the present and so the history of the techniques and key historical references are threaded throughout the book. Just because a reference is dated in the previous century (or even the antepenultimate century) doesn’t mean it isn’t useful! Likewise, with the numerous figures drawn from across the fields of materials science and engineering and nanotechnology, we do not reference the source in each caption. But at the very end of the book each of our many generous colleagues whose work we have used is clearly acknowledged.
4,412 citations
TL;DR: Recent advances in the understanding of the atomic structure and optical properties of semiconductor nanocrystals are discussed and new strategies for band gap and electronic wave function engineering to control the location of charge carriers are discussed.
Abstract: Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular imaging, and ultrasensitive detection. A major feature of semiconductor nanocrystals is the quantum confinement effect, which leads to spatial enclosure of the electronic charge carriers within the nanocrystal. Because of this effect, researchers can use the size and shape of these “artificial atoms” to widely and precisely tune the energy of discrete electronic energy states and optical transitions. As a result, researchers can tune the light emission from these particles throughout the ultraviolet, visible, near-infrared, and mid-infrared spectral ranges. These particles also span the transition between small molecules and bulk crystals, instilling novel optical properties such as carrier multiplication, single-particle blinking, and spectral diffusi...
1,497 citations
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Abstract: Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics
655 citations
TL;DR: InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy, showing clear indications of band-to-band tunnelling.
Abstract: InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.
174 citations
TL;DR: In this paper, the authors reported near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires for future photonic integrated circuits for telecommunications applications.
Abstract: We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications.
148 citations