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Proceedings ArticleDOI

Aspects and Reduction of Miller Capacitance of Lateral Tunnel FETs

01 Jun 2018-

AbstractThis paper discusses aspects of gate-to-drain capacitance (Miller capacitance) of lateral tunnel FETs (LTFETs). It is considered how to reduce the mirror capacitance of LTFET.

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Citations
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01 Jan 2016
Abstract: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications • Based on timely published and unpublished work written by expert authors • Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses • Describes the physical effects (quantum, tunneling) of MOS devices • Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment • Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities.

References
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Journal ArticleDOI
25 Oct 2010
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Abstract: Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.

1,272 citations


"Aspects and Reduction of Miller Cap..." refers background in this paper

  • ...INTRODUCTION Tunnel FETs are considered as promising devices for future low-energy and high-speed devices [1]....

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Journal ArticleDOI
Abstract: We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gate-drain capacitance Cgd on drain design and gate length was further investigated for reduction of switching delay in TFETs.

170 citations


"Aspects and Reduction of Miller Cap..." refers background in this paper

  • ...Although efforts have been made to estimate switching performance of such devices by assuming a device model [2], further advancement is necessary for accurate analysis....

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  • ...The reason for such behavior has not been discussed in detail in [2]....

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  • ...However, lateral TFETs are found to have a large Miller capacitance regardless of materials [2]....

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  • ...It is seen that Cgd (Miller capacitance) roughly traces Cgg as demonstrated in [2]....

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  • ...A possible solution has been suggested in [2]....

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Book
28 Feb 2017

8 citations


"Aspects and Reduction of Miller Cap..." refers background in this paper

  • ...In designing the device structure, we must carefully determine the gate-offset length so that the switching performance is not degraded significantly [5]....

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Journal ArticleDOI
Abstract: This paper proposes how to experimentally define the threshold voltage for various TFETs based on the theoretical point of view. We propose that the gate voltage defined corresponding to the peak of normalized transconductance is effectively the threshold voltage of TFETs. We also demonstrate that this definition is valid for different structures of TFET. In addition, we address the short-channel effect with such definition of threshold voltage for lateral TFET. It is shown that the short-channel effect significantly increased the off-current and the threshold voltage due to the extension of the drain potential and degradation of gate-field integrity in TFETs.

5 citations


"Aspects and Reduction of Miller Cap..." refers background in this paper

  • ...Device Structure Assumed Figure 1 shows the lateral TFET device structure assumed here [3]....

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  • ...Transfer characteristics reveal that threshold voltage is sub-one volt [3]....

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