Atmospheric pressure chemical vapour deposition of SnSe and SnSe2 thin films on glass
TL;DR: In this paper, atmospheric pressure chemical vapour deposition of tin monoselenide and tin diselenide films on glass substrate was achieved by reaction of diethyl selenide with tin tetrachloride at 350-650°C. X-ray diffraction showed that all the films were crystalline and matched the reported pattern for SnSe and or SnSe2.
About: This article is published in Thin Solid Films.The article was published on 2008-06-02. It has received 154 citations till now. The article focuses on the topics: Tin selenide & Thin film.
Citations
More filters
TL;DR: In this paper, a high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 × 10(3) A W(-1), a high EQE of 2.61 × 10 (5)%, and superb detectivity with 1.01 × 10 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively.
Abstract: High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 × 10(3) A W(-1), a high EQE of 2.61 × 10(5)%, and superb detectivity of 1.01 × 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively.
441 citations
TL;DR: In this article, the inherent relationship between the structural characteristics and the thermoelectric performance of tin selenide (SnSe) is discussed, including the thermodynamics, crystal structures, and electronic structures.
389 citations
TL;DR: The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress and important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed.
Abstract: The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b-axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li-ion batteries, and other emerging fields are also discussed.
216 citations
TL;DR: In this article, a controllable synthesis of single-crystal IV-VI chalcogenide nanostructures on mica substrates by vapor transport deposition is reported.
Abstract: Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.
210 citations
Cites background from "Atmospheric pressure chemical vapou..."
...potential applications, such as memory switching devices [13], infrared optoelectronic devices [14-16], and anode materials to improve lithium-ion diffusivity [17]....
[...]
TL;DR: Through a solution approach, SnSe(2) nanoplate-graphene composites were prepared and applied as anode materials in lithium ion batteries, showing promising storage performance superior to SnSe (2) nanoplates or graphene alone.
206 citations
References
More filters
Book•
12 Oct 1992
TL;DR: In this paper, the authors used the carbon C 1s peak at 285 eV as a reference for charge correction in XPS analyses of samples prepared outside the high vacuum chamber relatively thick carbon layers are formed on the surfaces.
Abstract: Analysis of XPS spectra of Fe2 and Fe3 ions in oxide April 15th, 2019 Carbon is ubiquitous and is present on all surfaces for XPS analysis It is common practice to use the carbon C 1s peak at 285 eV as a reference for charge correction In routine XPS analyses of samples prepared outside the high vacuum chamber relatively thick carbon layers are formed on the surfaces and the corrected XPS peak positions are independent of the apparent or experimentally
3,450 citations
"Atmospheric pressure chemical vapou..." refers background in this paper
...4 eV) doublets were attributed to Se in SnSe [28,29]....
[...]
TL;DR: In this article, the results of Raman scattering and infrared reflectivity measurements on the IV-VI layer-type semiconductors SnS and SnSe are presented and the infrared-active TO, the associated LO-phonon frequencies, and the dielectric constants for all three principal polarizations are determined from a Kramers-Kronig analysis of the reflectivity data.
Abstract: The results of Raman scattering and infrared reflectivity measurements on the IV-VI layer-type semiconductors SnS and SnSe are presented. The infrared-active TO, the associated LO-phonon frequencies, and the dielectric constants for all three principal polarizations have been determined from a Kramers-Kronig analysis of the reflectivity data. The symmetries of the zone-center phonons observed in the different polarization configurations are in agreement with the group-theoretical analysis of the ${D}_{2h}^{16}$ space group of these compounds. Despite the center of inversion symmetry in this structure, some infrared- and Raman-active modes are found to be nearly degenerate, suggesting the importance of the layerlike character in these compounds as in the isomorphic GeS and GeSe. A comparison of the phonon frequencies of the corresponding modes in the spectra of SnS and SnSe, or GeS and GeSe, indicates that the frequencies vary as a power (-2.2) of the lattice constant.
452 citations
TL;DR: In this paper, a mixture of SnCl4 with H2S at 300−545 °C was used for the deposition of SnS2, SnS3, and SnSS3.
Abstract: Atmospheric pressure chemical vapor deposition of SnS2, Sn2S3, and SnS has been achieved onto glass substrates from the reaction of SnCl4 with H2S at 300−545 °C. The films show good uniformity and surface coverage, adherence, and a variety of colors (black, yellow, brown, and gray) dependent on deposition temperature and film thickness. Growth rates were on the order of 1−2 μm min-1. All the films were crystalline. For substrate temperatures of up to 500 °C single phase films with the hexagonal SnS2 structure (a = 3.65(1) A, c = 5.88(1) A) were formed. At 525 °C a film of mixed composition containing predominantly orthorhombic Sn2S3 (a = 8.83(1) A, b = 3.76(1) A, c = 14.03(1) A) was formed together with some SnS2. At 545 °C films with orthorhombic SnS structure (a = 4.30(1) A, b = 11.20(1) A, c = 3.99(1) A) were formed. Scanning electron microscopy (SEM) revealed a variety of different film thicknesses and morphologies, including needles, plates, and ovoids, dependent on the deposition temperature and tim...
381 citations
TL;DR: The Raman spectra of 2H and 4H-SnS2 and 6Hb-SnSe2 have been studied at room and liquid nitrogen temperatures in this paper.
Abstract: The Raman spectra of 2H and 4H-SnS2 and 6Hb-SnSe2 have been studied at room and liquid nitrogen temperatures. Interpretation of the observed Raman modes is given in terms of the different symmetries of these polytypes and the more important short-range forces involved in determining the energies of the higher-energy phonon modes are identified by the use of a simple force-constant model.
207 citations