TL;DR: This work presents a free and open source software tool for analysing both the position and shapes of atomic columns in STEM-images, using 2-D elliptical Gaussian distributions, and can extract changes in the lattice parameters and shape of A-cation columns from annular dark field images of perovskite oxide heterostructures.
Abstract: Scanning transmission electron microscopy (STEM) data with atomic resolution can contain a large amount of information about the structure of a crystalline material. Often, this information is hard to extract, due to the large number of atomic columns and large differences in intensity from sublattices consisting of different elements. In this work, we present a free and open source software tool for analysing both the position and shapes of atomic columns in STEM-images, using 2-D elliptical Gaussian distributions. The software is tested on variants of the perovskite oxide structure. By first fitting the most intense atomic columns and then subtracting them, information on all the projected sublattices can be obtained. From this, we can extract changes in the lattice parameters and shape of A-cation columns from annular dark field images of perovskite oxide heterostructures. Using annular bright field images, shifts in oxygen column positions are also quantified in the same heterostructure. The precision of determining the position of atomic columns is compared between STEM data acquired using standard acquisition, and STEM-images obtained as an image stack averaged after using non-rigid registration.
TL;DR: This work reports that high Wrec of 6.3 J cm-3 with η of 90% can be simultaneously achieved by constructing a room temperature M2–M3 phase boundary in (1-x)AgNbO3-xAgTaO3 solid solution system, and provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications.
Abstract: Dielectric capacitors with high energy storage density (Wrec) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high Wrec of 6.3 J cm-3 with η of 90% can be simultaneously achieved by constructing a room temperature M2–M3 phase boundary in (1-x)AgNbO3-xAgTaO3 solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20–150 °C and excellent cycling reliability up to 106 cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications. Dielectric capacitors are widely used in electronic systems but they possess inferior energy density in comparison with other electrochemical energy storage. Here, the authors construct a diffused phase boundary to simultaneously achieve high energy storage density and efficiency in AgNbO3antiferroelectrics.
TL;DR: The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.
Abstract: Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.
TL;DR: This work determines how, for a fixed total electron-budget, the available dose should be fractionated for maximum strain mapping precision and finds that reductions in scanning-artefacts of more than 70% are achievable with image series of 20-30 frames in length.
50 citations
Cites methods from "Atomap: a new software tool for the..."
...The experiment-design method presented here for spatial-precision optimisation is general across various STEM detector geometries; including, medium-angle dark-field (MAADF) [31] , annular brightfield (ABF) [32] , or even spectrum-imaging time-series [33] ....
TL;DR: The CalAtom software is developed for quantitative analyses of atomic columns in (scanning) transmission electron microscopy, (S)TEM, images and offers several options for further analyses, such as in-plane scale local environments of the atomic columns, local elementary composition and real-space averaging of image motifs.
TL;DR: In this paper, complex polar structures of incommensurate modulations (ICMs) were revealed in chemically modified perovskite antiferroelectrics using advanced transmission electron microscopy techniques.
Abstract: Complex polar structures of incommensurate modulations (ICMs) are revealed in chemically modified ${\mathrm{PbZrO}}_{3}$ perovskite antiferroelectrics using advanced transmission electron microscopy techniques. The Pb-cation displacements, previously assumed to arrange in a fully compensated antiparallel fashion, are found to be either antiparallel, but with different magnitudes, or in a nearly orthogonal arrangement in adjacent stripes in the ICMs. Ab initio calculations corroborate the low-energy state of these arrangements. Our discovery corrects the atomic understanding of ICMs in ${\mathrm{PbZrO}}_{3}$-based perovskite antiferroelectrics.
TL;DR: In this paper, a method for measuring and mapping displacement fields and strain fields from high-resolution electron microscope (HREM) images is developed based upon centring a small aperture around a strong reflection in the Fourier transform of an HREM lattice image and performing an inverse Fourier transformation.
1,828 citations
"Atomap: a new software tool for the..." refers methods in this paper
...The blue solid line shows the result from the method outlined in this paper, and the dashed green line from GPA
Fig....
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...GPA is performed using the {111} and {112} FFT spots utilizing the STO substrate far away from the interface as a reference....
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...Historically, this method has been used with high-resolution TEM (HRTEM) [21, 22]....
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...Abbreviations STEM: scanning transmission electron microscopy; ADF: annular dark field; HAADF: high angle annular dark field; ABF: annular bright field; GPA: geometrical phase analysis; FFT: fast Fourier transform; PCA: principal component analysis; STO: SrTiO3; LSMO: La0....
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...Figure 4 shows a comparison between GPA and the method explained in this work, for an epitaxial LSMO/STO-(111) heterostructure....
TL;DR: In this article, the use of a high-angle annular detector in a scanning transmission electron microscope is shown to provide incoherent images of crystalline materials with strong compositional sensitivity.
791 citations
"Atomap: a new software tool for the..." refers background in this paper
...In HAADF-STEM, the intensity of an atomic column is related to the atomic number of the elements in the atomic columns and the number of atoms in the columns [9]....
TL;DR: The successful fabrication, using a pulsed laser deposition technique, of SrTiO3 superlattice films with oxygen doping profiles that exhibit subnanometre abruptness are reported, which open a pathway to the microscopic study of individual vacancies and their clustering, not only in oxides, but in crystalline materials more generally.
Abstract: At the heart of modern oxide chemistry lies the recognition that beneficial (as well as deleterious) materials properties can be obtained by deliberate deviations of oxygen atom occupancy from the ideal stoichiometry. Conversely, the capability to control and confine oxygen vacancies will be important to realize the full potential of perovskite ferroelectric materials, varistors and field-effect devices. In transition metal oxides, oxygen vacancies are generally electron donors, and in strontium titanate (SrTiO3) thin films, oxygen vacancies (unlike impurity dopants) are particularly important because they tend to retain high carrier mobilities, even at high carrier densities. Here we report the successful fabrication, using a pulsed laser deposition technique, of SrTiO3 superlattice films with oxygen doping profiles that exhibit subnanometre abruptness. We profile the vacancy concentrations on an atomic scale using annular-dark-field electron microscopy and core-level spectroscopy, and demonstrate absolute detection sensitivities of one to four oxygen vacancies. Our findings open a pathway to the microscopic study of individual vacancies and their clustering, not only in oxides, but in crystalline materials more generally.
572 citations
"Atomap: a new software tool for the..." refers background in this paper
...Simulations are often needed to interpret the intensity quantitatively as there are complicating effects from sample orientation [10], material phase [10], defects [11], and strain [11] in the material....
TL;DR: In this paper, the authors evaluated the prospects for reaching sub-A electron probes through aberration correction in the scanning transmission electron microscope (STEM) and proposed a second generation quadrupole octupole C S corrector that pays particular attention to the influence of instabilities.
552 citations
"Atomap: a new software tool for the..." refers methods in this paper
...Background Scanning transmission electron microscopy (STEM) together with correction of geometric aberrations in the probe forming optics allows routine acquisition of atomic resolution images with sub-Å resolutions [1, 2]....