Patent
Atomic layer deposition processes for non-volatile memory devices
Yi Ma,Shreyas Kher,Khaled Ahmed,Tejal Goyani,Maitreyee Mahajani,Jallepally Ravi,Yi-Chiau Huang +6 more
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TLDR
In this paper, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer over an inter-poly dielectric stack disposed over a silicon oxide layer, and a control gate poly silicon layer over the second aluminum oxide layer.Abstract:
Embodiments of the invention provide memory devices and methods for forming memory devices. In one embodiment, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer disposed over the floating gate polysilicon layer, a first aluminum oxide layer disposed over the silicon oxynitride layer, a hafnium silicon oxynitride layer disposed over the first aluminum oxide layer, a second aluminum oxide layer disposed over the hafnium silicon oxynitride layer, and a control gate polysilicon layer disposed over the second aluminum oxide layer. In another embodiment, a memory device is provided which includes a control gate polysilicon layer disposed over an inter-poly dielectric stack disposed over a silicon oxide layer disposed over the floating gate polysilicon layer. The inter-poly dielectric stack contains two silicon oxynitride layers separated by a silicon nitride layer.read more
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
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Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
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Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
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Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
TL;DR: In this article, an oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying carbon-containing gas to substrate, (c) supplying nitrogen-containing gases to substrate; and (d) supplying an oxygen-containing gaseous gas to the surface of the substrate.
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TL;DR: A precursor source vessel as mentioned in this paper comprises a vessel body, a passage within the vessel body and a valve attached to a surface of the body, where the valve regulates flow through the passage.
References
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Patent
Sequential chemical vapor deposition
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Journal ArticleDOI
Surface Chemistry for Atomic Layer Growth
TL;DR: In this article, the basic concepts of atomic layer growth using molecular precursors and binary reaction sequence chemistry are reviewed and the characteristics of film deposition using ALP are explored using recent examples for Al2O3 ALP.
Patent
Atomic layer deposition with nitrate containing precursors
TL;DR: In this paper, metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, eg metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
Patent
Radical-assisted sequential CVD
TL;DR: In this article, a new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step.
Journal ArticleDOI
Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
Mikko Ritala,Kaupo Kukli,Antti Rahtu,Petri Räisänen,Markku Leskelä,Timo Sajavaara,Juhani Keinonen +6 more
TL;DR: This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.