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Patent

Backplane reinforcement and interconnects for solar cells

TL;DR: In this paper, a backplane for back contact solar cells that provides for solar cell substrate reinforcement and electrical interconnects is described, which comprises depositing an inter-digitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the inter-determined pattern, and attaching a second backplane having a second inter-decomposition pattern of EB electrodes and EB electrodes at the conductive EB and EB plugs.
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
Citations
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Patent
19 Dec 2014
TL;DR: A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency as mentioned in this paper.
Abstract: A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

164 citations

Patent
23 Feb 2015
TL;DR: In this article, a solar cell module is provided, which includes a substrate, a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate.
Abstract: A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.

56 citations

Patent
02 Jun 2015
TL;DR: In this paper, a photovoltaic (PV) module cleaning system can include a robotic cleaning device and a support system, which can be configured to provide a metered fill to the robotic cleaning devices.
Abstract: A photovoltaic (PV) module cleaning system can include a robotic cleaning device and a support system. The support system can be configured to provide a metered fill to the robotic cleaning device. In some embodiments, the robotic cleaning device and include a curved cleaning head. Various techniques for deploying a robotic cleaning device on PV modules include out-and-back, leapfrog, among others.

54 citations

Patent
27 May 2011
TL;DR: In this article, laser processing schemes for producing various types of hetero-junction and homojunction solar cells are disclosed for producing different types of solar cells, such as base and emitter contact opening, selective doping, and metal ablation.
Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

45 citations

Patent
Thomas Pass1
22 Sep 2014
TL;DR: In this paper, a dielectric spacer is formed on a surface of the solar cell structure and a metal foil is placed on the metal layer, then a laser beam is used to weld the metal foil to the metal layers.
Abstract: A solar cell structure includes P-type and N-type doped regions. A dielectric spacer is formed on a surface of the solar cell structure. A metal layer is formed on the dielectric spacer and on the surface of the solar cell structure that is exposed by the dielectric spacer. A metal foil is placed on the metal layer. A laser beam is used to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam ablates portions of the metal foil and the metal layer that are over the dielectric spacer. The laser ablation of the metal foil cuts the metal foil into separate P-type and N-type metal fingers.

28 citations

References
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Patent
20 Jun 2006
TL;DR: In this paper, the UV photoexcitation process is used to remove native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films and increasing the excitation energy of precursors.
Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

404 citations

Patent
03 Dec 2001
TL;DR: Using phase separation technique perforated as well as non-perforated polymeric structures can be made with high aspect ratios (>5) by varying the phase separation process the properties (e.g. porous, non-porous, dense, open skin) of the moulded product can be tuned as mentioned in this paper.
Abstract: Using phase separation technique perforated as well as non-perforated polymeric structures can be made with high aspect ratios (>5). By varying the phase separation process the properties (e.g. porous, non-porous, dense, open skin) of the moulded product can be tuned. Applications are described in the field of micro fluidics (e.g. micro arrays, electrophoretic boards), optics, polymeric solar cells, ball grid arrays, and tissue engineering.

399 citations

Patent
29 Jun 1999
TL;DR: In this paper, a method of making contacts on solar cells is disclosed, where the front surface of a substrate is coated with a dielectric or surface masking layer or layers that contains dopants of the opposite polarity to those used in the surface of the substrate material.
Abstract: A method of making contacts on solar cells is disclosed. The front surface (41) of a substrate (11) is coated with a dielectric or surface masking layer or layers (12) that contains dopants of the opposite polarity to those used in the surface of the substrate material (11). The dielectric layer or layers (12) not only acts as a diffusion source for forming the emitter for the underlying substrate (11) when heat treated, but also acts as a metallization mask during the subsequent electroless plating with solutions such as nickel and copper. The mask may be formed by laser scribing (14) which melts the layer or layers (12), thereby more heavily doping and exposing zones (15) where metallization is required.

292 citations

Patent
21 Apr 1999
TL;DR: In this paper, an electroplating cell for face-up processing of semiconductor substrates is presented. But the authors do not provide a method for electro-chemically depositing a uniform metal layer onto a substrate.
Abstract: The invention generally provides an apparatus and a method for electro-chemically depositing a uniform metal layer onto a substrate. More specifically, the invention provides an electro-chemical deposition cell for face-up processing of semiconductor substrates comprising a substrate support member, a cathode connected to the substrate plating suface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. Preferably, the anode comprises a consumable metal source disposed in a liquid permeable structure, and the anode and a cavity ring define a cavity for holding and distributing the electroplating solution to the substrate plating surface. Preferably, the substrate support member comprises a vacuum chuck having vacuum ports disposed on the substrate supporting surface that serves to provide suction during processing and to provide a blow-off gas flow to prevent backside contamination during substrate transfers. The substrate support member also rotates and vibrates during processing to enhance the electro-deposition onto the substrate plating surface. Another aspect of the invention provides a dual catch-cup system comprising an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system. The invention also provides an apparatus for delivering an electrical power to a substrate surface comprising an annular ring electrically connected to a power supply, the annular ring having a contact portion to electrically contact a peripheral portion of the substrate surface. Preferably, the contact portion comprises annular surface, such as a metal impregnated elastomer ring, to provide continuous electrical contact with the peripheral portion of the substrate. Another aspect of the invention provides an apparatus for holding a substrate for electro-chemical deposition comprising a substrate holder having a substrate support surface and an annular ring electrically connected to a power supply, the annular ring having a contact portion to electrically contact a peripheral portion of the substrate surface.

286 citations

Journal ArticleDOI
TL;DR: In this paper, an epitaxial Si layer over porous Si is transferred onto a dissimilar substrate by bonding and etch back of porous Si. The highest etching selectivity is achieved by the alkali free solution of HF, H2O2, and H 2O which is essential for this single etch-stop method to produce a submicron-thick active layer with superior thickness uniformity (473±14 nm) across a 5 in. silicon-on-insulator wafer.
Abstract: We demonstrate a novel method for bond and etch back silicon on insulator in which an epitaxial Si layer over porous Si is transferred onto a dissimilar substrate by bonding and etch back of porous Si. The highest etching selectivity (100 000:1) between the porous Si and the epitaxial layer is achieved by the alkali free solution of HF, H2O2, and H2O which is essential for this single etch‐stop method to produce a submicron‐thick active layer with superior thickness uniformity (473±14 nm) across a 5 in. silicon‐on‐insulator wafer.

282 citations