Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.
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TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Abstract: We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...
2,525 citations
TL;DR: In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Abstract: Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs
1,882 citations
Cites background from "Band parameters for III–V compound ..."
...Energy bandgap versus lattice constant for wurtzite III-nitride and zincblende III-phosphide semiconductor alloy systems employing Al, In, and Ga [3], [4]....
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TL;DR: In this article, the most recent advances in the synthesis and application of phosphors for white light-emitting diodes (pc-WLEDs) with emphasis specifically on: (a) principles to tune the excitation and emission spectra of the phosphors: prediction according to crystal field theory, and structural chemistry characteristics (e.g. covalence of chemical bonds, electronegativity, and polarization effects of element); (b) pc-W LEDs with phosphors excited by blue-LED chips: phosphor characteristics, structure, and activated ions
Abstract: Phosphor-converted white light-emitting diodes (pc-WLEDs) are emerging as an indispensable solid-state light source for the next generation lighting industry and display systems due to their unique properties including but not limited to energy savings, environment-friendliness, small volume, and long persistence. Until now, major challenges in pc-WLEDs have been to achieve high luminous efficacy, high chromatic stability, brilliant color-rending properties, and price competitiveness against fluorescent lamps, which rely critically on the phosphor properties. A comprehensive understanding of the nature and limitations of phosphors and the factors dominating the general trends in pc-WLEDs is of fundamental importance for advancing technological applications. This report aims to provide the most recent advances in the synthesis and application of phosphors for pc-WLEDs with emphasis specifically on: (a) principles to tune the excitation and emission spectra of phosphors: prediction according to crystal field theory, and structural chemistry characteristics (e.g. covalence of chemical bonds, electronegativity, and polarization effects of element); (b) pc-WLEDs with phosphors excited by blue-LED chips: phosphor characteristics, structure, and activated ions (i.e. Ce 3+ and Eu 2+ ), including YAG:Ce, other garnets, non-garnets, sulfides, and (oxy)nitrides; (c) pc-WLEDs with phosphors excited by near ultraviolet LED chips: single-phased white-emitting phosphors (e.g. Eu 2+ –Mn 2+ activated phosphors), red-green-blue phosphors, energy transfer, and mechanisms involved; and (d) new clues for designing novel high-performance phosphors for pc-WLEDs based on available LED chips. Emphasis shall also be placed on the relationships among crystal structure, luminescence properties, and device performances. In addition, applications, challenges and future advances of pc-WLEDs will be discussed.
1,860 citations
TL;DR: An overview of the theoretical principles involved, as well as applications ranging from high-precision quantum electrodynamics experiments to quantum-information processing can be found in this paper.
Abstract: Quantum dots embedded in photonics nanostructures provide unprecedented control over the interaction between light and matter. This review gives an overview of the theoretical principles involved, as well as applications ranging from high-precision quantum electrodynamics experiments to quantum-information processing.
1,240 citations
Cites background from "Band parameters for III–V compound ..."
...The latter is an entirely bulk semiconductor quantity given by the Kane energy EP = 2|〈ux|p|us〉uc|2/m0 = 2|〈uy|p|us〉uc|2/m0 (Vurgaftman et al., 2001)....
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TL;DR: In this article, the current status of the field of (III,Mn)V diluted magnetic semiconductors is reviewed, focusing on the first two, more mature research directions: the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, and the development of spintronic devices with new functionalities.
Abstract: The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and post-growth treatment techniques have played a central role in the field, often pushing the limits of dilute Mn moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. In the review we focus on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magneto-transport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment.
1,032 citations
Cites background or methods from "Band parameters for III–V compound ..."
...If the KL Hamiltonian parameters are taken from the known values for the host III-V compound (Vurgaftman et al., 2001), the strength of this exchange interaction Jpd can be extracted from one set of data, for example from spectroscopic studies of isolated Mn acceptors as explained in Section II....
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...Since for many properties it is necessary to incorporate spin-orbit coupling in a realistic way, six- or eight-band Kohn-Luttinger (KL) k ·p Hamiltonians that include the spin-orbit split-off band are desirable (Luttinger and Kohn, 1955; Vurgaftman et al., 2001)....
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...…is obtained by evaluating the itinerant hole susceptibility using a realistic band Hamiltonian, H = HKL + s · hMF , (20) where HKL is the six-band KL Hamiltonian of the GaAs host band (Vurgaftman et al., 2001) and ~s is the hole spin operator (Abolfath et al., 2001a; Dietl et al., 2001b, 2000)....
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14,205 citations
Book•
01 Jan 1985
TL;DR: In this paper, the physical properties of crystals systematically in tensor notation are presented, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them.
Abstract: First published in 1957, this classic study has been reissued in a paperback version that includes an additional chapter bringing the material up to date. The author formulates the physical properties of crystals systematically in tensor notation, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them. The mathematical groundwork is laid in a discussion of tensors of the first and second ranks. Tensors of higher ranks and matrix methods are then introduced as natural developments of the theory. A similar pattern is followed in discussing thermodynamic and optical aspects.
8,520 citations
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
4,451 citations
Book•
21 Mar 1997
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Abstract: Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue and blue-green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGaN MQW LDs latest results - lasers with self-organized InGaN quantum dots
3,805 citations
TL;DR: In this paper, the LCAO interpolation method was used as an interpolation technique in connection with more accurate calculations made by the cellular or orthogonalized plane-wave methods.
Abstract: The LCAO, or Bloch, or tight binding, approximation for solids is discussed as an interpolation method, to be used in connection with more accurate calculations made by the cellular or orthogonalized plane-wave methods. It is proposed that the various integrals be obtained as disposable constants, so that the tight binding method will agree with accurate calculations at symmetry points in the Brillouin zone for which these calculations have been made, and that the LCAO method then be used for making calculations throughout the Brillouin zone. A general discussion of the method is given, including tables of matrix components of energy for simple cubic, face-centered and body-centered cubic, and diamond structures. Applications are given to the results of Fletcher and Wohlfarth on Ni, and Howarth on Cu, as illustrations of the fcc case. In discussing the bcc case, the splitting of the energy bands in chromium by an antiferromagnetic alternating potential is worked out, as well as a distribution of energy states for the case of no antiferromagnetism. For diamond, comparisons are made with the calculations of Herman, using the orthogonalized plane-wave method. The case of such crystals as InSb is discussed, and it is shown that their properties fit in with the energy band picture.
3,696 citations