Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
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...The physical mechanism for the large hole mobility enhancement at low stress and large vertical field has not been highlighted previously but can be inferred from the data using previous experimental and theoretical work [34]–[40]....
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...11, which is consistent with the published data in references [17], [38], [40] for biaxial tensile and [34], [35] for uniaxial compressive stress....
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...Summarizing references [34]–[40], the strain enhanced hole mobility understanding has lagged behind electron [38], [41] and much of the understanding, as in this paper, has first been driven by experimental data....
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