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Journal ArticleDOI

Bandgap and optical transitions in thin films from reflectance measurements

01 Apr 1992-Vacuum (Pergamon)-Vol. 43, Iss: 4, pp 313-316
TL;DR: In this paper, a new formulation and method are presented for evaluating bandgap, optical transitions and optical constants from the reflectance data for films deposited onto a non-absorbing substrate, which can be used to evaluate the optical properties of the films.
About: This article is published in Vacuum.The article was published on 1992-04-01. It has received 241 citations till now. The article focuses on the topics: Thin film.
Citations
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Journal ArticleDOI
TL;DR: In this article, a non-crystalline thin films of chalcogenide Cd 50 S 50−x Se x system were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10 −4 ǫ.

412 citations

Journal ArticleDOI
TL;DR: In this paper, a reproducible direct current (DC) reactive magnetron sputtering technique was used to synthesize CuO polycrystalline thin films for solar cells, which were characterized by using X-ray diffraction, scanning electron microscopy, Xray photoelectron spectroscopy, optical spectroscope, photoluminescence, and Raman spectroscopic techniques.

121 citations

Journal ArticleDOI
TL;DR: In this article, a simple low temperature method was developed to grow cubic Cu2−xSe (x=0.2) semiconductor, semitransparent thin films, based on the reaction of CuSO4, triethanolamine, sodium selenosulphate (Na2SeSO3) in aqueous alkaline medium at 5°C.

119 citations

Journal ArticleDOI
TL;DR: Synthesis and characterization of undoped and Mn2+ doped ZnS nanocrystallites (radius 2-3 nm) embedded in a partially densified silica gel matrix are presented in this paper.
Abstract: Synthesis and characterization of undoped and Mn2+ doped ZnS nanocrystallites (radius 2–3 nm) embedded in a partially densified silica gel matrix are presented. Optical transmittance, photoluminescence (PL), ellipsometric and electron spin resonance measurements revealed manifestation of quantum size effect. PL spectra recorded at room temperature revealed broad blue emission signal centred at ∼ 420 nm and Mn2+ related yellow-orange band centred at ∼ 590 nm while ESR indicated that Mn in ZnS was present as dispersed impurity rather than Mn cluster.

99 citations

Journal ArticleDOI
Abstract: Mn2+ doped In2S3–SiO2 nanocomposite thin films were synthesized by sol-gel technique. The films were annealed in air at different temperatures (473–623 K) and characterized by optical, microstructural and electron spin resonance (ESR) study. Optical transmittance study revealed the manifestation of quantum size effect while ESR indicated the presence of manganese in indium sulphide as dispersed dopant rather than manganese cluster.

98 citations


Cites background from "Bandgap and optical transitions in ..."

  • ...The absorption coefficient (α) may be written as (Bhattacharyya et al 1992) α = A(hν – Egi) m/hν, (1) where Egi is the band gap corresponding to a particular transition occurring in the film and m characterizes the nature of transition....

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References
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Book
01 Jan 1971
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی

4,630 citations

Journal ArticleDOI

1,892 citations

Journal ArticleDOI
TL;DR: In this paper, the authors show that the importance of any stoichiometric deviation in relation to the production of conductive layers is discussed; the minimum value ϱ min of the resistivity is about 5 × 10 -3 ohms cm.

367 citations

Journal ArticleDOI
TL;DR: In this article, p-type ZnTe films, deposited by hot-wall vacuum evaporation, were studied extensively in the range of incident photon energy 0.6-2.6 eV.
Abstract: Optical properties of p-type ZnTe films, deposited by hot-wall vacuum evaporation, were studied extensively in the range of incident photon energy 0.6–2.6 eV. Variations of refractive index, absorption and extinction coefficients with incident photon energy are reported in this communication.

39 citations

Journal ArticleDOI
01 Jan 1991-Vacuum
TL;DR: Optical properties of Cd1−xZnxTe films (0.1 < × < 0.7) were strudied as a function of incident photon energy in this article.

36 citations