Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
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...Fromthe observed harge distribution and self- onsistent al- ulations, an estimate of the band stru ture parameters and their relation with the indu ed gap an be obtained(Castro et al., 2007a)....
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...As dis ussed in (Castro et al., 2007b), thereis a band of surfa e states ompletely lo alized in the bottomlayer, and another surfa e band whi h alternates between thetwo....
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...Noti e, therefore, that the gap in the biasedbilayer system depends on the applied bias and hen e an be measured experimentally (Castro et al., 2007a;M Cann, 2006; M Cann and Fal'ko, 2006)....
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...It an be shown analyt-i ally (Castro et al., 2007b) that a bilayer zigzag edge,like that shown in Fig....
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