Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
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TLDR
In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.Abstract:
In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.read more
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References
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Journal ArticleDOI
Band offsets in III-nitride heterostructures
Hilmi Ünlü,Asen Asenov +1 more
TL;DR: In this article, a theoretical investigation of band offsets in GaN-based group-III-nitride ternary/binary heterostructures with zinc blende structure is presented.
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Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
A. L. Yang,H. P. Song,H. Y. Wei,X. L. Liu,J. Wang,X. Q. Lv,P. Jin,S. Y. Yang,Q. S. Zhu,Z. G. Wang +9 more
TL;DR: In this paper, the valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 ± 0.6 eV, respectively.
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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction.
Mahesh Kumar,Mahesh Kumar,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,Basanta Roul,Basanta Roul,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.
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InN films and nanostructures grown on Si (1 1 1) by RF-MBE
A. O. Ajagunna,A. O. Ajagunna,A. Adikimenakis,A. Adikimenakis,Eleftherios Iliopoulos,Eleftherios Iliopoulos,Katerina Tsagaraki,Katerina Tsagaraki,M. Androulidaki,M. Androulidaki,Alexandros Georgakilas,Alexandros Georgakilas +11 more
TL;DR: In this paper, the growth of InN on Si (1.1) substrates, by nitrogen rf plasma source molecular beam epitaxy (RF-MBE), has been investigated.
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Raman scattering in large single indium nitride dots: Correlation between morphology and strain
F. Demangeot,J. Frandon,C. Pinquier,M. Caumont,Olivier Briot,B. Maleyre,Sandra Clur-Ruffenach,Bernard Gil +7 more
TL;DR: In this article, the E-2 phonon frequency was detected in micro-Raman spectra recorded from single InN dots of sizes ranging from 480 nm down to 30 nm in height, allowing a rough evaluation of the residual strain field.