Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
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TLDR
In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.Abstract:
In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.read more
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References
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Journal ArticleDOI
Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions
Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: In this article, a comparison of the I-V characteristics of GaN/Si3N4/n-Si epilayers was performed using high-resolution X-ray diffraction and thickness of ultrathin Si 3N4 layer was measured by transmission electron microscopy.
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InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates
Javier Grandal,M. A. Sánchez-Garcı́a,E. Calleja,E. Gallardo,J. M. Calleja,Esperanza Luna,Achim Trampert,A. Jahn +7 more
TL;DR: In this paper, the growth of wurtzite InN nanocolumns on A-plane GaN templates and their structural and optical characterization by scanning and transmission electron microscopy, photoluminescence, and Raman spectroscopy were reported.
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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
Ling Sang,Qin Sheng Zhu,Shaoyan Yang,Gui Peng Liu,Huijie Li,Hong Yuan Wei,Chun Mei Jiao,Shu-Man Liu,Zhanguo Wang,Xiao Wei Zhou,Wei Mao,Yue Hao,Bo Shen +12 more
TL;DR: The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy and a large forward-backward asymmetry is observed.
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Interfacial structure of MBE grown InN on GaN
Th-H. Kehagias,Eleftherios Iliopoulos,Andreas Delimitis,Gerard Nouet,Emmanouil Dimakis,Alexandros Georgakilas,Ph-H. Komninou +6 more
TL;DR: The structural properties of the interfacial area of InN thin films, grown by rf-plasma MBE on top of GaN/Al 2 O 3 substrates have been investigated by TEM and HRTEM as mentioned in this paper.
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Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy
TL;DR: InGaN/GaN multiple quantum wells (MQWs) were grown on sapphire substrates, which were first coated with thick GaN or AlN films, at relatively low temperatures (650°C) as mentioned in this paper.