Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
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TLDR
In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.Abstract:
In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.read more
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References
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Journal ArticleDOI
Fabrication of InN/Si heterojunctions with rectifying characteristics
TL;DR: In this article, an InN/Si heterojunction consisting of InN with an oxygen concentration of ∼3% and a bandgap of 1.8 ∼ 2.0 eV were formed by MBE and showed good rectifying characteristics with a reverse current of 1 × 10−7 A/cm2.
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The growth and characterization of an InN layer on AlN/Si (1 1 1)
TL;DR: In this article, the variation of the strain and structural properties of InN layers grown by molecular beam epitaxy on AlN/Si(1.1) substrates were investigated using reflection high-energy electron diffraction (RHEED), atomic force microscopy, scanning electron microscopy and photoluminescence, and X-ray diffraction.
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Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3
Zuzanna Liliental-Weber,Hai Lu,William J. Schaff,Olga Kryliouk,Hyun Jong Park,J. Mangum,Timothy J. Anderson +6 more
TL;DR: In this article, transmission electron microscopy was applied to determine similarities and difference in structural perfection between InN epi-layers grown by MBE on c-and r-plane Al2O3 and InN nanocrystals grown on similar substrates using non catalytic, template-free hydride metal-organic vapor phase epitaxy.
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Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux
Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,S. Dash,A.K. Tyagi,A. T. Kalghatgi,S. B. Krupanidhi +9 more
TL;DR: In this paper, the removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles.
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Fabrication and characterization of 20 periods InN/InGaN MQWs
TL;DR: In this article, the InN/In0.20N MQWs were fabricated on In0.75-0.80Ga0.25−0.30N underlayers by radio frequency plasma-assisted molecular-beam epitaxy.