Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
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TLDR
In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.Abstract:
In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.read more
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Valence band splittings and band offsets of AlN, GaN and InN.
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TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
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References
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Journal ArticleDOI
Ultraviolet and violet GaN light emitting diodes on silicon
TL;DR: In this paper, the fabrication and characterization of GaN-based double heterostructure light emitting diodes grown by molecular beam epitaxy on Si(111) substrates is reported.
Journal ArticleDOI
Valence band splittings and band offsets of AlN, GaN, and InN
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this paper, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Journal ArticleDOI
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Eric Feltin,Bernard Beaumont,M. Laügt,P. de Mierry,Philippe Vennéguès,Hacene Lahreche,Mathieu Leroux,Pierre Gibart +7 more
TL;DR: In this article, the insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown (2.5 μm) GaN layer.
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Journal ArticleDOI
Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy
TL;DR: In this article, a Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized using vacuum evaporated gold as the barrier contact and aluminum for the ohmic contact.