Binary group III-nitride based heterostructures: band offsets and transport properties
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Abstract: In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.
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01 Mar 1997
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Abstract: First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.
274 citations
TL;DR: In this paper, the fundamental mechanism and interfacial charge transfer dynamics in TiO2/graphene nanocomposites are reviewed and the design strategies of various graphene-based hybrids are highlighted along with some specialized synthetic routes adopted to attain preferred properties.
103 citations
TL;DR: In this article, a general overview of the semiconductor materials applied as photoelectrodes in the treatment of various pollutants is presented, with a particular focus on the main experimental conditions employed in the photo-electrocatalytic degradation of various contaminants.
Abstract: Industrial sources of environmental pollution generate huge amounts of industrial wastewater containing various recalcitrant organic and inorganic pollutants that are hazardous to the environment. On the other hand, industrial wastewater can be regarded as a prospective source of fresh water, energy, and valuable raw materials. Conventional sewage treatment systems are often not efficient enough for the complete degradation of pollutants and they are characterized by high energy consumption. Moreover, the chemical energy that is stored in the wastewater is wasted. A solution to these problems is an application of photoelectrocatalytic treatment methods, especially when they are coupled with energy generation. The paper presents a general overview of the semiconductor materials applied as photoelectrodes in the treatment of various pollutants. The fundamentals of photoelectrocatalytic reactions and the mechanism of pollutants treatment as well as parameters affecting the treatment process are presented. Examples of different semiconductor photoelectrodes that are applied in treatment processes are described in order to present the strengths and weaknesses of the photoelectrocatalytic treatment of industrial wastewater. This overview is an addition to the existing knowledge with a particular focus on the main experimental conditions employed in the photoelectrocatalytic degradation of various pollutants with the application of semiconductor photoelectrodes.
53 citations
TL;DR: In this article, a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely, a GRINSCH diode, is proposed.
Abstract: High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers constrain the performance of the ultraviolet light emitting diodes and lasers at shorter wavelengths. To address those technical challenges, we design, grow, and fabricate a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely, a GRINSCH diode. Calculated electronic band diagram and carrier concentrations show an automatic formation of a p–n junction with electron and hole concentrations of ∼1018 /cm3 in the graded AlGaN layers without intentional doping. The transmission electron microscopy experiment confirms the composition variation in the axial direction of the graded AlGaN nanowires. Significantly lower turn-on voltage of 6.5 V (reduced by 2.5 V) and smaller series resistance of 16.7 Ω (reduced by nearly four times) are achieved in the GRINSCH diode, compared with the ...
48 citations
TL;DR: In this paper , the morphology and structure of these materials influence on the sensor response, and challenges and future perspectives for ZnO chemiresistive sensors are also discussed, focusing on how the morphology of the materials can influence on sensor response.
Abstract: Chemiresistive gas sensors have been widely applied to monitor analytes of environmental, food and health importance. Among the plethora of materials that can be used for designing chemiresistive sensors, ZnO is one of the most explored for gas sensing, as this material has a low-cost, is non-toxic and can be easily obtained through standard chemical synthesis. Adding to this, ZnO can form heterostructures capable to improve sensor performance regarding sensitivity, selectivity and stability. Moreover, ZnO heterostructures also contribute to lower operating temperature of gas sensors, since the synergistic effects contribute to amplify the sensor signal. In this review, we survey recent advances on different types of chemiresistive ZnO-based gas sensors, focusing on how the morphology and structure of these materials influence on the sensor response. Challenges and future perspectives for ZnO chemiresistive sensors are also discussed.
47 citations
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TL;DR: In this article, a 2.8-μm-thick GaN-based light-emitting diode structure on 2 in. Si(111) substrates was grown by metalorganic chemical-vapor deposition.
Abstract: Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The ∼2.8-μm-thick diode structure was grown using a low-temperature AlN:Si seed layer and two low-temperature AlN:Si interlayers for stress reduction. In current–voltage measurements, low turn-on voltages and a series resistance of 55 Ω were observed for a vertically contacted diode. By in situ insertion of a SixNy mask, the luminescence intensity is significantly enhanced. A light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm is achieved.
183 citations
TL;DR: In this article, a gate-length AlGaN/GaN modulation doped field effect transistors (MODFETs) have been fabricated on an insulating GaN buffer layer for better carrier confinement.
Abstract: 1 /spl mu/m gate-length AlGaN/GaN modulation doped field effect transistors (MODFET's) have been fabricated on an insulating GaN buffer layer for better carrier confinement. These devices demonstrate simultaneously high current levels (>500 mA/mm), excellent pinch-off and high gate-drain breakdown voltages (220 V for 3 /spl mu/m gate-drain spacing). In contrast to their GaAs counterparts, the current-gain cutoff frequency of the AlGaN/GaN devices shows little degradation at high drain voltage biases. A power-gain cutoff frequency of 19 GHz is obtained at 100 V. ACW power density of 1.57 W/mm at 4 Ghz is also achieved when biased at 28 V and 205 mA/mm.
176 citations
TL;DR: In this paper, the growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates using low pressure metalorganic chemical vapor deposition X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained.
Abstract: The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition X‐ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively Room‐temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared
176 citations
TL;DR: In this paper, the temperature dependence of the electrical properties of Pt∕GaN Schottky barrier has been studied in terms of the existing models on inhomogeneous barriers and correlated to the nanoscale electrical characterization of the barrier.
Abstract: The temperature dependence of the electrical properties of Pt∕GaN Schottky barrier was studied. In particular, a Schottky barrier height of 0.96eV and an ideality factor of 1.16 were found after a postdeposition annealing at 400°C. Nanoscale electrical characterization was carried out by the conductive biased tip of an atomic force microscope both on the bare GaN surface and on the Pt∕GaN contacts. The presence of a lateral inhomogeneity of the Schottky barrier, with a Gaussian distribution of the barrier height values, was demonstrated. Moreover, GaN surface defects were demonstrated to act as local preferential paths for the current conduction. The temperature dependent electrical characteristics of the diodes were discussed in terms of the existing models on inhomogeneous barriers and correlated to the nanoscale electrical characterization of the barrier. In this way, the anomalous electrical behavior of the ideality factor and of the Schottky barrier and the low experimental value of the Richardson’s ...
163 citations
TL;DR: In this paper, the first microwave power measurement on GaN FET's was performed at 2 GHz and a class A output power density of 1.1 W/mm with a power added efficiency of 18.6% was obtained on a 1 /spl mu/m gate-length AlGaN/GaN MODFET.
Abstract: We report the first microwave power measurement on GaN FET's. At 2 GHz, a class A output power density of 1.1 W/mm with a power added efficiency of 18.6% was obtained on a 1 /spl mu/m gate-length AlGaN/GaN MODFET. Mathematical simulation estimated that the transistor was operating at a channel temperature of 360/spl deg/C as a result of the poor thermal conductivity of the sapphire substrate. Despite this serious heating problem, the power output density still rivals GaAs MESFET's.
152 citations