Journal ArticleDOI
Bonding of silicon wafers for silicon‐on‐insulator
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TLDR
In this paper, the surface energy of a silicon-on-insulator was evaluated based on crack propagation theory, and it was found that the bond strength increased with the bonding temperature from about 60-85 erg/cm2 at room temperature to ≂2200 erg/ cm2 at 1400°C.Abstract:
Several aspects of a new silicon‐on‐insulator technique utilizing bonding of oxidized silicon wafers were investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces contacted face‐to‐face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory was developed. The bond strength was found to increase with the bonding temperature from about 60–85 erg/cm2 at room temperature to ≂2200 erg/cm2 at 1400 °C. The strength was essentially independent of the bond time. Bonds created during 10‐s annealing at 800 °C were mechanically strong enough to withstand the mechanical and/or chemical thinning of the top wafer to the desired thickness and subsequent device processing. A model was proposed to explain three distinct phases of bonding in the temperature domain. Electrical properties of the bond were tested using metal‐oxide‐semiconductor (MOS) capacitors. The results were consistent with a negative charge de...read more
Citations
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Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Journal ArticleDOI
Semiconductor wafer bonding
Ulrich Gösele,Q. Y. Tong +1 more
TL;DR: Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
Journal ArticleDOI
New materials for micro-scale sensors and actuators An engineering review
Stephen A. Wilson,Renaud Jourdain,Qi Zhang,Robert A. Dorey,Christopher R. Bowen,Magnus Willander,Qamar Ul Wahab,Safaa Al-Hilli,Omer Nur,Eckhard Quandt,Christer Johansson,E. Pagounis,Manfred Kohl,Jovan Matovic,Björn Samel,Wouter van der Wijngaart,Edwin Jager,Daniel O Carlsson,Zoran Djinovic,Michael Wegener,Carmen Moldovan,Rodica Iosub,E. Abad,Michael Wendlandt,Cristina Rusu,Katrin Persson +25 more
TL;DR: In this paper, a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices is provided. And a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology is presented.
Journal ArticleDOI
Wafer-to-wafer bonding for microstructure formation
TL;DR: Wafer-to-wafer bonding processes for microstructure fabrication are categorized and described in this article, which have an impact in packaging and structure design, including direct bonds, anodic bonds and bonds with intermediate layers.
Journal ArticleDOI
Wafer direct bonding: tailoring adhesion between brittle materials
TL;DR: In this article, the authors provide an overview of the current understanding of the factors determining the bondability and strength of the bonding obtainable and assess the present state of the experimental methods for determining basic parameters governing the adhesion.
References
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Journal ArticleDOI
Field Assisted Glass‐Metal Sealing
TL;DR: In this paper, a new process is described which permits the sealing of metals to glass and other insulators at temperatures well below the softening point of the glass, by applying a dc voltage in excess of a few hundred volts between the glass and the metal in such a way that the former is at a negative potential with respect to the latter.
Journal ArticleDOI
Wafer bonding for silicon‐on‐insulator technologies
TL;DR: In this paper, a silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs, and the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Journal ArticleDOI
Silicon‐to‐silicon direct bonding method
TL;DR: In this paper, it was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation.
Journal ArticleDOI
Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopy
M. Grundner,H. Jacob +1 more
TL;DR: In this paper, surface spectroscopy measurements of silicon single-crystal wafers which have been treated in order to obtain hydrophilic and hydrophobic surfaces, respectively, were reported.