BSIM-CMG: Standard FinFET compact model for advanced circuit design
Citations
75 citations
Cites background or methods from "BSIM-CMG: Standard FinFET compact m..."
...The unified compact model, BSIM-CMG accurately predicts the charge and current voltage characteristics of different FinFETs and gate-all-around structures [6]....
[...]
...The UCM requires only four different model parameters [6]: insulator capacitance (Cins), channel area (Ach), channel doping (Nch) and effective channel width (Weff )....
[...]
...The normalized current can be calculated as in a regular FinFET [6]:...
[...]
71 citations
Cites methods from "BSIM-CMG: Standard FinFET compact m..."
...modeled by BSIM-CMG model [12], [13], which is the first industry standard model of FinFETs, and ferroelectric layer by the Landau–Khalatnikov (LK) [14] model....
[...]
51 citations
34 citations
24 citations
Cites methods from "BSIM-CMG: Standard FinFET compact m..."
...We employ the BSIM-CMG FinFET model from [24] for a 14-nm technology node and compare the runtime of three HE primitives...
[...]
...Memory arrays and peripherals are simulated in HSPICE [54] using the 14-nm BSIM-CMG FinFET model [24] (the same technology node as the CPU)....
[...]
References
987 citations
"BSIM-CMG: Standard FinFET compact m..." refers background in this paper
...Electrical confinement splits the energy levels at the fin-insulator interface and it can be modeled via triangular well [12]....
[...]
705 citations
"BSIM-CMG: Standard FinFET compact m..." refers background or result in this paper
...However, whether intentional or due to manufacturing variation, industry FinFET crosssections are non-uniform and similar to Trapezoidal shapes with rounded corners [2] [3], as shown in Fig....
[...]
...1) has been adopted in all sub-20nm IC technologies [2]–[5] as a replacement of the conventional bulk planar technology....
[...]
...The fin shape has been set to be similar to industry FinFETs reported in [2] [3]....
[...]
...The fact that most of industry FinFETs are fabricated over bulk substrates [2] [3] [4] implies that additional effects must be taken into account by the core model....
[...]
580 citations
"BSIM-CMG: Standard FinFET compact m..." refers background in this paper
...Most of the device’s compact models are based on a “core model”, which is a model obtained using a long-channel assumption, so called the gradual-channel-approximation (GCA) [8]....
[...]
558 citations
"BSIM-CMG: Standard FinFET compact m..." refers background or methods or result in this paper
...However, whether intentional or due to manufacturing variation, industry FinFET crosssections are non-uniform and similar to Trapezoidal shapes with rounded corners [2] [3], as shown in Fig....
[...]
...Finally, BSIM-CMG model, including the new models presented in this work, has been validated with experimental data from Intel 14 nm FinFET technology [3]....
[...]
...The fin shape has been set to be similar to industry FinFETs reported in [2] [3]....
[...]
...The fact that most of industry FinFETs are fabricated over bulk substrates [2] [3] [4] implies that additional effects must be taken into account by the core model....
[...]
551 citations
"BSIM-CMG: Standard FinFET compact m..." refers background or methods in this paper
...Hence, results of [16] [17] are unified into a single λ [11], using the parameters for the unified model, as shown in Table III....
[...]
...ΔVTH has already been modeled for double-gate [16] and cylindrical-gate [17] FinFETs, resulting in models that depend on terminal voltages, gate length, and the parameter λ, so called field penetration length....
[...]
...Cylindrical-Gate/Nano-wire [17] √ 8εchR 2 ln ( 1+ tins R ) +εins4R 2...
[...]