BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion
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References
841 citations
"BSIM-IMG: Advanced Model for FDSOI ..." refers methods in this paper
...Unified 1/f noise model developed in [10], [11] is widely used in all industry standard compact models [12]–[14]....
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466 citations
"BSIM-IMG: Advanced Model for FDSOI ..." refers methods in this paper
...The model is improved by incorporating essential physics of the sub-threshold region, and non-liner DIBL effect is modeled as [16], [17]:...
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358 citations
"BSIM-IMG: Advanced Model for FDSOI ..." refers methods in this paper
...Unified 1/f noise model developed in [10], [11] is widely used in all industry standard compact models [12]–[14]....
[...]
245 citations
"BSIM-IMG: Advanced Model for FDSOI ..." refers methods in this paper
...Unified 1/f noise model developed in [10], [11] is widely used in all industry standard compact models [12]–[14]....
[...]
...In the subthreshold region, the noise model can be approximated as [10] (a) (b)...
[...]
189 citations
"BSIM-IMG: Advanced Model for FDSOI ..." refers background in this paper
...Another key feature of the FDSOI devices is the ability to modulate threshold voltage (Vth) simply by tuning the applied bias at the back gate [3]....
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